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Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer

Detalles Bibliográficos
Autores principales: Mohammadi, Vahid, Nihtianov, Stoyan, Fang, Changming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8511194/
https://www.ncbi.nlm.nih.gov/pubmed/34642419
http://dx.doi.org/10.1038/s41598-021-99821-9
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author Mohammadi, Vahid
Nihtianov, Stoyan
Fang, Changming
author_facet Mohammadi, Vahid
Nihtianov, Stoyan
Fang, Changming
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spelling pubmed-85111942021-10-14 Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer Mohammadi, Vahid Nihtianov, Stoyan Fang, Changming Sci Rep Author Correction Nature Publishing Group UK 2021-10-12 /pmc/articles/PMC8511194/ /pubmed/34642419 http://dx.doi.org/10.1038/s41598-021-99821-9 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Author Correction
Mohammadi, Vahid
Nihtianov, Stoyan
Fang, Changming
Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer
title Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer
title_full Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer
title_fullStr Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer
title_full_unstemmed Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer
title_short Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer
title_sort author correction: a doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer
topic Author Correction
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8511194/
https://www.ncbi.nlm.nih.gov/pubmed/34642419
http://dx.doi.org/10.1038/s41598-021-99821-9
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AT fangchangming authorcorrectionadopinglessjunctionformationmechanismbetweennsiliconandanatomicallythinboronlayer