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Technology agnostic frequency characterization methodology for memristors

Over the past decade, memristors have been extensively studied for a number of applications, almost exclusively with DC characterization techniques. Studies of memristors in AC circuits are sparse, with only a few examples found in the literature, and characterization methods with an AC input are al...

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Autores principales: Manouras, Vasileios, Stathopoulos, Spyros, Serb, Alex, Prodromakis, Themis
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8523686/
https://www.ncbi.nlm.nih.gov/pubmed/34663849
http://dx.doi.org/10.1038/s41598-021-00001-6
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author Manouras, Vasileios
Stathopoulos, Spyros
Serb, Alex
Prodromakis, Themis
author_facet Manouras, Vasileios
Stathopoulos, Spyros
Serb, Alex
Prodromakis, Themis
author_sort Manouras, Vasileios
collection PubMed
description Over the past decade, memristors have been extensively studied for a number of applications, almost exclusively with DC characterization techniques. Studies of memristors in AC circuits are sparse, with only a few examples found in the literature, and characterization methods with an AC input are also sparingly used. However, publications concerning the usage of memristors in this working regime are currently on the rise. Here we propose a "technology agnostic" methodology for memristor testing in certain frequency bands. A measurement process is initially proposed, with specific instructions on sample preparation, followed by an equipment calibration and measurement protocol. This article is structured in a way which aims to facilitate the usage of any available measurement equipment and it can be applied on any type of memristive technology. The second half of this work is centered around the representation of data received from following this process. Bode plot and Nyquist plot representations are considered and the information received from them is evaluated. Finally, examples of expected behaviors are given, characterizing simulated scenarios which represent different internal device models and different switching behaviors, such as capacitive or inductive switching. This study aims at providing a cohesive way for memristor characterization, to be used as a good starting point for frequency applications, and for understanding physical processes inside the devices, by streamlining the measuring process and providing a frame in which data representation and comparison will be facilitated.
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spelling pubmed-85236862021-10-20 Technology agnostic frequency characterization methodology for memristors Manouras, Vasileios Stathopoulos, Spyros Serb, Alex Prodromakis, Themis Sci Rep Article Over the past decade, memristors have been extensively studied for a number of applications, almost exclusively with DC characterization techniques. Studies of memristors in AC circuits are sparse, with only a few examples found in the literature, and characterization methods with an AC input are also sparingly used. However, publications concerning the usage of memristors in this working regime are currently on the rise. Here we propose a "technology agnostic" methodology for memristor testing in certain frequency bands. A measurement process is initially proposed, with specific instructions on sample preparation, followed by an equipment calibration and measurement protocol. This article is structured in a way which aims to facilitate the usage of any available measurement equipment and it can be applied on any type of memristive technology. The second half of this work is centered around the representation of data received from following this process. Bode plot and Nyquist plot representations are considered and the information received from them is evaluated. Finally, examples of expected behaviors are given, characterizing simulated scenarios which represent different internal device models and different switching behaviors, such as capacitive or inductive switching. This study aims at providing a cohesive way for memristor characterization, to be used as a good starting point for frequency applications, and for understanding physical processes inside the devices, by streamlining the measuring process and providing a frame in which data representation and comparison will be facilitated. Nature Publishing Group UK 2021-10-18 /pmc/articles/PMC8523686/ /pubmed/34663849 http://dx.doi.org/10.1038/s41598-021-00001-6 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Manouras, Vasileios
Stathopoulos, Spyros
Serb, Alex
Prodromakis, Themis
Technology agnostic frequency characterization methodology for memristors
title Technology agnostic frequency characterization methodology for memristors
title_full Technology agnostic frequency characterization methodology for memristors
title_fullStr Technology agnostic frequency characterization methodology for memristors
title_full_unstemmed Technology agnostic frequency characterization methodology for memristors
title_short Technology agnostic frequency characterization methodology for memristors
title_sort technology agnostic frequency characterization methodology for memristors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8523686/
https://www.ncbi.nlm.nih.gov/pubmed/34663849
http://dx.doi.org/10.1038/s41598-021-00001-6
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