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Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs

The presence of surface traps is an important phenomenon in AlGaN/GaN HEMT. The electrical and physical properties of these surface traps have been analyzed through the study of 2DEG electron concentration along with the variation of aluminum percentage in the barrier layer of HEMT. This analysis sh...

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Detalles Bibliográficos
Autores principales:	Kaushik, Pragyey Kumar, Singh, Sankalp Kumar, Gupta, Ankur, Basu, Ananjan, Chang, Edward Yi
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2021
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8528904/ https://www.ncbi.nlm.nih.gov/pubmed/34669088 http://dx.doi.org/10.1186/s11671-021-03615-x

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