New Opportunities for High‐Performance Source‐Gated Transistors Using Unconventional Materials

Source‐gated transistors (SGTs), which are typically realized by introducing a source barrier in staggered thin‐film transistors (TFTs), exhibit many advantages over conventional TFTs, including ultrahigh gain, lower power consumption, higher bias stress stability, immunity to short‐channel effects,...

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Detalles Bibliográficos
Autores principales: Wang, Gang, Zhuang, Xinming, Huang, Wei, Yu, Junsheng, Zhang, Huaiwu, Facchetti, Antonio, Marks, Tobin J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2021
Materias:
Reviews
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8529450/
https://www.ncbi.nlm.nih.gov/pubmed/34449126
http://dx.doi.org/10.1002/advs.202101473

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8529450/
https://www.ncbi.nlm.nih.gov/pubmed/34449126
http://dx.doi.org/10.1002/advs.202101473

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