Fabrication of ZnO Ceramics with Defects by Spark Plasma Sintering Method and Investigations of Their Photoelectrochemical Properties

ZnO, as an important semiconductor material, has attracted much attention due to its excellent physical properties, which can be widely used in many fields. Notably, the defects concentration and type greatly affect the intrinsic properties of ZnO. Thus, controllable adjustment of ZnO defects is particularly important for studying its photoelectric properties. In this work, we fabricated ZnO ceramics (ZnO(C)) with different defects through spark plasma sintering (SPS) process by varying sintering temperature and using reduction environment. The experimental results indicate that the changes of color and light absorption in as-prepared ZnO originate from the different kinds of defects, i.e., oxygen vacancies (V(O)), interstitial zinc (Zn(i)), and Zinc vacancies (V(Zn)). Moreover, with the increase in calcination temperature, the concentration of oxygen defects and interstitial zinc defects in the ceramics increases gradually, and the conductivity of the ceramics is also improved. However, too many defects are harmful to the photoelectrochemical properties of the ceramics, and the appropriate oxygen defects can improve the utilization of visible light.