Effect of High-Temperature Nitridation and Buffer Layer on Semi-Polar (10–13) AlN Grown on Sapphire by HVPE

We have investigated the effect of high-temperature nitridation and buffer layer on the semi-polar aluminum nitride (AlN) films grown on sapphire by hydride vapor phase epitaxy (HVPE). It is found the high-temperature nitridation and buffer layer at 1300 °C are favorable for the formation of single...

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Detalles Bibliográficos
Autores principales: Zhang, Qian, Li, Xu, Zhao, Jianyun, Sun, Zhifei, Lu, Yong, Liu, Ting, Zhang, Jicai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8537155/
https://www.ncbi.nlm.nih.gov/pubmed/34683204
http://dx.doi.org/10.3390/mi12101153

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8537155/
https://www.ncbi.nlm.nih.gov/pubmed/34683204
http://dx.doi.org/10.3390/mi12101153

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