Low Resistance Asymmetric III-Nitride Tunnel Junctions Designed by Machine Learning

The tunnel junction (TJ) is a crucial structure for numerous III-nitride devices. A fundamental challenge for TJ design is to minimize the TJ resistance at high current densities. In this work, we propose the asymmetric p-AlGaN/i-InGaN/n-AlGaN TJ structure for the first time. P-AlGaN/i-InGaN/n-AlGaN...

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Detalles Bibliográficos
Autores principales: Lin, Rongyu, Han, Peng, Wang, Yue, Lin, Ronghui, Lu, Yi, Liu, Zhiyuan, Zhang, Xiangliang, Li, Xiaohang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8537599/
https://www.ncbi.nlm.nih.gov/pubmed/34684907
http://dx.doi.org/10.3390/nano11102466

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8537599/
https://www.ncbi.nlm.nih.gov/pubmed/34684907
http://dx.doi.org/10.3390/nano11102466

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