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Integration Technology for Wafer-Level LiNbO(3) Single-Crystal Thin Film on Silicon by Polyimide Adhesive Bonding and Chemical Mechanical Polishing
An integration technology for wafer-level LiNbO(3) single-crystal thin film on Si has been achieved. The optimized spin-coating speed of PI (polyimide) adhesive is 3500 rad/min. According to Fourier infrared analysis of the chemical state of the film baked under different conditions, a high-quality...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8537918/ https://www.ncbi.nlm.nih.gov/pubmed/34685009 http://dx.doi.org/10.3390/nano11102554 |
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author | Geng, Wenping Yang, Xiangyu Xue, Gang Xu, Wenhao Bi, Kaixi Mei, Linyu Zhang, Le Hou, Xiaojuan Chou, Xiujian |
author_facet | Geng, Wenping Yang, Xiangyu Xue, Gang Xu, Wenhao Bi, Kaixi Mei, Linyu Zhang, Le Hou, Xiaojuan Chou, Xiujian |
author_sort | Geng, Wenping |
collection | PubMed |
description | An integration technology for wafer-level LiNbO(3) single-crystal thin film on Si has been achieved. The optimized spin-coating speed of PI (polyimide) adhesive is 3500 rad/min. According to Fourier infrared analysis of the chemical state of the film baked under different conditions, a high-quality PI film that can be used for wafer-level bonding is obtained. A high bonding strength of 11.38 MPa is obtained by a tensile machine. The bonding interface is uniform, completed and non-porous. After the PI adhesive bonding process, the LiNbO(3) single-crystal was lapped by chemical mechanical polishing. The thickness of the 100 mm diameter LiNbO(3) can be decreased from 500 to 10 μm without generating serious cracks. A defect-free and tight bonding interface was confirmed by scanning electron microscopy. X-ray diffraction results show that the prepared LiNbO(3) single-crystal thin film has a highly crystalline quality. Heterogeneous integration of LiNbO(3) single-crystal thin film on Si is of great significance to the fabrication of MEMS devices for in-situ measurement of space-sensing signals. |
format | Online Article Text |
id | pubmed-8537918 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-85379182021-10-24 Integration Technology for Wafer-Level LiNbO(3) Single-Crystal Thin Film on Silicon by Polyimide Adhesive Bonding and Chemical Mechanical Polishing Geng, Wenping Yang, Xiangyu Xue, Gang Xu, Wenhao Bi, Kaixi Mei, Linyu Zhang, Le Hou, Xiaojuan Chou, Xiujian Nanomaterials (Basel) Article An integration technology for wafer-level LiNbO(3) single-crystal thin film on Si has been achieved. The optimized spin-coating speed of PI (polyimide) adhesive is 3500 rad/min. According to Fourier infrared analysis of the chemical state of the film baked under different conditions, a high-quality PI film that can be used for wafer-level bonding is obtained. A high bonding strength of 11.38 MPa is obtained by a tensile machine. The bonding interface is uniform, completed and non-porous. After the PI adhesive bonding process, the LiNbO(3) single-crystal was lapped by chemical mechanical polishing. The thickness of the 100 mm diameter LiNbO(3) can be decreased from 500 to 10 μm without generating serious cracks. A defect-free and tight bonding interface was confirmed by scanning electron microscopy. X-ray diffraction results show that the prepared LiNbO(3) single-crystal thin film has a highly crystalline quality. Heterogeneous integration of LiNbO(3) single-crystal thin film on Si is of great significance to the fabrication of MEMS devices for in-situ measurement of space-sensing signals. MDPI 2021-09-29 /pmc/articles/PMC8537918/ /pubmed/34685009 http://dx.doi.org/10.3390/nano11102554 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Geng, Wenping Yang, Xiangyu Xue, Gang Xu, Wenhao Bi, Kaixi Mei, Linyu Zhang, Le Hou, Xiaojuan Chou, Xiujian Integration Technology for Wafer-Level LiNbO(3) Single-Crystal Thin Film on Silicon by Polyimide Adhesive Bonding and Chemical Mechanical Polishing |
title | Integration Technology for Wafer-Level LiNbO(3) Single-Crystal Thin Film on Silicon by Polyimide Adhesive Bonding and Chemical Mechanical Polishing |
title_full | Integration Technology for Wafer-Level LiNbO(3) Single-Crystal Thin Film on Silicon by Polyimide Adhesive Bonding and Chemical Mechanical Polishing |
title_fullStr | Integration Technology for Wafer-Level LiNbO(3) Single-Crystal Thin Film on Silicon by Polyimide Adhesive Bonding and Chemical Mechanical Polishing |
title_full_unstemmed | Integration Technology for Wafer-Level LiNbO(3) Single-Crystal Thin Film on Silicon by Polyimide Adhesive Bonding and Chemical Mechanical Polishing |
title_short | Integration Technology for Wafer-Level LiNbO(3) Single-Crystal Thin Film on Silicon by Polyimide Adhesive Bonding and Chemical Mechanical Polishing |
title_sort | integration technology for wafer-level linbo(3) single-crystal thin film on silicon by polyimide adhesive bonding and chemical mechanical polishing |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8537918/ https://www.ncbi.nlm.nih.gov/pubmed/34685009 http://dx.doi.org/10.3390/nano11102554 |
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