Excellent Bipolar Resistive Switching Characteristics of Bi(4)Ti(3)O(12) Thin Films Prepared via Sol-Gel Process

Herein, Bi(4)Ti(3)O(12) (BIT) ferroelectric thin films were fabricated into Au/BIT/LaNiO(3)/Si structures to demonstrate their memristor properties. Repeatable and stable bipolar resistive switching (RS) characteristics of the device are first reported in this work. The switching ratio of the device...

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Detalles Bibliográficos
Autores principales: Zhou, He-Chun, Jiang, Yan-Ping, Tang, Xin-Gui, Liu, Qiu-Xiang, Li, Wen-Hua, Tang, Zhen-Hua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8537946/
https://www.ncbi.nlm.nih.gov/pubmed/34685146
http://dx.doi.org/10.3390/nano11102705

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8537946/
https://www.ncbi.nlm.nih.gov/pubmed/34685146
http://dx.doi.org/10.3390/nano11102705

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