Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs

A single unified analytical model is presented to predict the shot noise for both the source-to-drain (SD) and the gate tunneling current in sub-10 nm MOSFETs with ultrathin oxide. Based on the Landauer formula, the model is constructed from the sequential tunneling flows associated with number fluc...

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Detalles Bibliográficos
Autor principal: Lee, Jonghwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8538198/
https://www.ncbi.nlm.nih.gov/pubmed/34685204
http://dx.doi.org/10.3390/nano11102759
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author Lee, Jonghwan
author_facet Lee, Jonghwan
author_sort Lee, Jonghwan
collection PubMed
description A single unified analytical model is presented to predict the shot noise for both the source-to-drain (SD) and the gate tunneling current in sub-10 nm MOSFETs with ultrathin oxide. Based on the Landauer formula, the model is constructed from the sequential tunneling flows associated with number fluctuations. This approach provides the analytical formulation of the shot noise as a function of the applied voltages. The model performs well in predicting the Fano factor for shot noise in the SD and gate tunneling currents.
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spelling pubmed-85381982021-10-24 Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs Lee, Jonghwan Nanomaterials (Basel) Article A single unified analytical model is presented to predict the shot noise for both the source-to-drain (SD) and the gate tunneling current in sub-10 nm MOSFETs with ultrathin oxide. Based on the Landauer formula, the model is constructed from the sequential tunneling flows associated with number fluctuations. This approach provides the analytical formulation of the shot noise as a function of the applied voltages. The model performs well in predicting the Fano factor for shot noise in the SD and gate tunneling currents. MDPI 2021-10-18 /pmc/articles/PMC8538198/ /pubmed/34685204 http://dx.doi.org/10.3390/nano11102759 Text en © 2021 by the author. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Lee, Jonghwan
Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs
title Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs
title_full Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs
title_fullStr Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs
title_full_unstemmed Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs
title_short Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs
title_sort unified model of shot noise in the tunneling current in sub-10 nm mosfets
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8538198/
https://www.ncbi.nlm.nih.gov/pubmed/34685204
http://dx.doi.org/10.3390/nano11102759
work_keys_str_mv AT leejonghwan unifiedmodelofshotnoiseinthetunnelingcurrentinsub10nmmosfets

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