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Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs
A single unified analytical model is presented to predict the shot noise for both the source-to-drain (SD) and the gate tunneling current in sub-10 nm MOSFETs with ultrathin oxide. Based on the Landauer formula, the model is constructed from the sequential tunneling flows associated with number fluc...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2021
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8538198/ https://www.ncbi.nlm.nih.gov/pubmed/34685204 http://dx.doi.org/10.3390/nano11102759 |