Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO(3) Capacitor

By a sol–gel method, a BiFeO(3) (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. Moreover, the effect of the...

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Detalles Bibliográficos
Autores principales: Kang, Tsung-Kuei, Lin, Yu-Yu, Liu, Han-Wen, Lin, Che-Li, Chang, Po-Jui, Kao, Ming-Cheng, Chen, Hone-Zern
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8538922/
https://www.ncbi.nlm.nih.gov/pubmed/34677524
http://dx.doi.org/10.3390/membranes11100758
Descripción
Sumario:By a sol–gel method, a BiFeO(3) (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. Moreover, the effect of the proposed BiFeO(3) capacitor on I(DS)-V(GS) hysteresis in the BFO TFT is 0.1–0.2 V. Because dV(int)/dV(GS) > 1 is obtained at a wide range of V(GS), it reveals that the incomplete dipole flipping is a major mechanism to obtain improved SS and a small hysteresis effect in the BFO TFT. Experimental results indicate that sol-gel BFO TFT is a potential candidate for digital application.

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