Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO(3) Capacitor

By a sol–gel method, a BiFeO(3) (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. Moreover, the effect of the...

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Autores principales: Kang, Tsung-Kuei, Lin, Yu-Yu, Liu, Han-Wen, Lin, Che-Li, Chang, Po-Jui, Kao, Ming-Cheng, Chen, Hone-Zern
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8538922/
https://www.ncbi.nlm.nih.gov/pubmed/34677524
http://dx.doi.org/10.3390/membranes11100758
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author Kang, Tsung-Kuei
Lin, Yu-Yu
Liu, Han-Wen
Lin, Che-Li
Chang, Po-Jui
Kao, Ming-Cheng
Chen, Hone-Zern
author_facet Kang, Tsung-Kuei
Lin, Yu-Yu
Liu, Han-Wen
Lin, Che-Li
Chang, Po-Jui
Kao, Ming-Cheng
Chen, Hone-Zern
author_sort Kang, Tsung-Kuei
collection PubMed
description By a sol–gel method, a BiFeO(3) (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. Moreover, the effect of the proposed BiFeO(3) capacitor on I(DS)-V(GS) hysteresis in the BFO TFT is 0.1–0.2 V. Because dV(int)/dV(GS) > 1 is obtained at a wide range of V(GS), it reveals that the incomplete dipole flipping is a major mechanism to obtain improved SS and a small hysteresis effect in the BFO TFT. Experimental results indicate that sol-gel BFO TFT is a potential candidate for digital application.
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spelling pubmed-85389222021-10-24 Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO(3) Capacitor Kang, Tsung-Kuei Lin, Yu-Yu Liu, Han-Wen Lin, Che-Li Chang, Po-Jui Kao, Ming-Cheng Chen, Hone-Zern Membranes (Basel) Communication By a sol–gel method, a BiFeO(3) (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. Moreover, the effect of the proposed BiFeO(3) capacitor on I(DS)-V(GS) hysteresis in the BFO TFT is 0.1–0.2 V. Because dV(int)/dV(GS) > 1 is obtained at a wide range of V(GS), it reveals that the incomplete dipole flipping is a major mechanism to obtain improved SS and a small hysteresis effect in the BFO TFT. Experimental results indicate that sol-gel BFO TFT is a potential candidate for digital application. MDPI 2021-09-30 /pmc/articles/PMC8538922/ /pubmed/34677524 http://dx.doi.org/10.3390/membranes11100758 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Communication
Kang, Tsung-Kuei
Lin, Yu-Yu
Liu, Han-Wen
Lin, Che-Li
Chang, Po-Jui
Kao, Ming-Cheng
Chen, Hone-Zern
Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO(3) Capacitor
title Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO(3) Capacitor
title_full Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO(3) Capacitor
title_fullStr Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO(3) Capacitor
title_full_unstemmed Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO(3) Capacitor
title_short Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO(3) Capacitor
title_sort improvements of electrical characteristics in poly-si nanowires thin-film transistors with external connection of a bifeo(3) capacitor
topic Communication
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8538922/
https://www.ncbi.nlm.nih.gov/pubmed/34677524
http://dx.doi.org/10.3390/membranes11100758
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