Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET

Since the oxide/source overlap structure can improve the tunneling probability and on-state current of tunneling field effect transistor (TFET) devices, and the silicon-on-insulator (SOI) structure has the effect of resisting the single event effect, SOI-TFET with the oxide/source overlap structure...

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Detalles Bibliográficos
Autores principales: Chong, Chen, Liu, Hongxia, Wang, Shulong, Wu, Xiaocong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8539033/
https://www.ncbi.nlm.nih.gov/pubmed/34683283
http://dx.doi.org/10.3390/mi12101232

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8539033/
https://www.ncbi.nlm.nih.gov/pubmed/34683283
http://dx.doi.org/10.3390/mi12101232

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