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A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor

A double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) as a terahertz (THz) detector at 315 GHz frequency is proposed and fabricated in this paper. The structure of the epitaxial layer material in the detector is optimized, and the performance of the GaN HEMT THz detector is improv...

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Detalles Bibliográficos
Autores principales:	Meng, Qingzhi, Lin, Qijing, Han, Feng, Jing, Weixuan, Wang, Yangtao, Jiang, Zhuangde
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8539176/ https://www.ncbi.nlm.nih.gov/pubmed/34683785 http://dx.doi.org/10.3390/ma14206193

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