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Study on Cross-Coupled-Based Sensing Circuits for Nonvolatile Flip-Flops Operating in Near/Subthreshold Voltage Region

To date, most studies focus on complex designs to realize offset cancelation characteristics in nonvolatile flip-flops (NV-FFs). However, complex designs using switches are ineffective for offset cancelation in the near/subthreshold voltage region because switches become critical contributors to the...

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Autor principal: Na, Taehui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8540686/
https://www.ncbi.nlm.nih.gov/pubmed/34683228
http://dx.doi.org/10.3390/mi12101177
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author Na, Taehui
author_facet Na, Taehui
author_sort Na, Taehui
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description To date, most studies focus on complex designs to realize offset cancelation characteristics in nonvolatile flip-flops (NV-FFs). However, complex designs using switches are ineffective for offset cancelation in the near/subthreshold voltage region because switches become critical contributors to the offset voltage. To address this problem, this paper proposes a novel cross-coupled NMOS-based sensing circuit (CCN-SC) capable of improving the restore yield, based on the concept that the simplest is the best, of an NV-FF operating in the near/subthreshold voltage region. Measurement results using a 65 nm test chip demonstrate that with the proposed CCN-SC, the restore yield is increased by more than 25 times at a supply voltage of 0.35 V, compared to that with a cross-coupled inverter-based SC, at the cost of 18× higher power consumption.
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spelling pubmed-85406862021-10-24 Study on Cross-Coupled-Based Sensing Circuits for Nonvolatile Flip-Flops Operating in Near/Subthreshold Voltage Region Na, Taehui Micromachines (Basel) Article To date, most studies focus on complex designs to realize offset cancelation characteristics in nonvolatile flip-flops (NV-FFs). However, complex designs using switches are ineffective for offset cancelation in the near/subthreshold voltage region because switches become critical contributors to the offset voltage. To address this problem, this paper proposes a novel cross-coupled NMOS-based sensing circuit (CCN-SC) capable of improving the restore yield, based on the concept that the simplest is the best, of an NV-FF operating in the near/subthreshold voltage region. Measurement results using a 65 nm test chip demonstrate that with the proposed CCN-SC, the restore yield is increased by more than 25 times at a supply voltage of 0.35 V, compared to that with a cross-coupled inverter-based SC, at the cost of 18× higher power consumption. MDPI 2021-09-29 /pmc/articles/PMC8540686/ /pubmed/34683228 http://dx.doi.org/10.3390/mi12101177 Text en © 2021 by the author. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Na, Taehui
Study on Cross-Coupled-Based Sensing Circuits for Nonvolatile Flip-Flops Operating in Near/Subthreshold Voltage Region
title Study on Cross-Coupled-Based Sensing Circuits for Nonvolatile Flip-Flops Operating in Near/Subthreshold Voltage Region
title_full Study on Cross-Coupled-Based Sensing Circuits for Nonvolatile Flip-Flops Operating in Near/Subthreshold Voltage Region
title_fullStr Study on Cross-Coupled-Based Sensing Circuits for Nonvolatile Flip-Flops Operating in Near/Subthreshold Voltage Region
title_full_unstemmed Study on Cross-Coupled-Based Sensing Circuits for Nonvolatile Flip-Flops Operating in Near/Subthreshold Voltage Region
title_short Study on Cross-Coupled-Based Sensing Circuits for Nonvolatile Flip-Flops Operating in Near/Subthreshold Voltage Region
title_sort study on cross-coupled-based sensing circuits for nonvolatile flip-flops operating in near/subthreshold voltage region
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8540686/
https://www.ncbi.nlm.nih.gov/pubmed/34683228
http://dx.doi.org/10.3390/mi12101177
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