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The Effects of Hydrogen Annealing on Carbon Nanotube Field-Effect Transistors
We have systematically investigated the effects of hydrogen annealing on Ni- and Al-contacted carbon nanotube field-effect transistors (CNTFETs), whose work functions have not been affected by hydrogen annealing. Measured results show that the electronic properties of single-walled carbon nanotubes...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8540963/ https://www.ncbi.nlm.nih.gov/pubmed/34684921 http://dx.doi.org/10.3390/nano11102481 |
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author | Uchino, Takashi Ayre, Greg N. Smith, David C. Hutchison, John L. de Groot, C. H. Ashburn, Peter |
author_facet | Uchino, Takashi Ayre, Greg N. Smith, David C. Hutchison, John L. de Groot, C. H. Ashburn, Peter |
author_sort | Uchino, Takashi |
collection | PubMed |
description | We have systematically investigated the effects of hydrogen annealing on Ni- and Al-contacted carbon nanotube field-effect transistors (CNTFETs), whose work functions have not been affected by hydrogen annealing. Measured results show that the electronic properties of single-walled carbon nanotubes are modified by hydrogen adsorption. The Ni-contacted CNTFETs, which initially showed metallic behavior, changed their p-FET behavior with a high on-current over 10 µA after hydrogen annealing. The on-current of the as-made p-FETs is much improved after hydrogen annealing. The Al-contacted CNTFETs, which initially showed metallic behavior, showed unipolar p-FET behavior after hydrogen annealing. We analyzed the energy band diagrams of the CNTFETs to explain experimental results, finding that the electron affinity and the bandgap of single-walled carbon nanotubes changed after hydrogen annealing. These results are consistent with previously reported ab initio calculations. |
format | Online Article Text |
id | pubmed-8540963 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-85409632021-10-24 The Effects of Hydrogen Annealing on Carbon Nanotube Field-Effect Transistors Uchino, Takashi Ayre, Greg N. Smith, David C. Hutchison, John L. de Groot, C. H. Ashburn, Peter Nanomaterials (Basel) Article We have systematically investigated the effects of hydrogen annealing on Ni- and Al-contacted carbon nanotube field-effect transistors (CNTFETs), whose work functions have not been affected by hydrogen annealing. Measured results show that the electronic properties of single-walled carbon nanotubes are modified by hydrogen adsorption. The Ni-contacted CNTFETs, which initially showed metallic behavior, changed their p-FET behavior with a high on-current over 10 µA after hydrogen annealing. The on-current of the as-made p-FETs is much improved after hydrogen annealing. The Al-contacted CNTFETs, which initially showed metallic behavior, showed unipolar p-FET behavior after hydrogen annealing. We analyzed the energy band diagrams of the CNTFETs to explain experimental results, finding that the electron affinity and the bandgap of single-walled carbon nanotubes changed after hydrogen annealing. These results are consistent with previously reported ab initio calculations. MDPI 2021-09-23 /pmc/articles/PMC8540963/ /pubmed/34684921 http://dx.doi.org/10.3390/nano11102481 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Uchino, Takashi Ayre, Greg N. Smith, David C. Hutchison, John L. de Groot, C. H. Ashburn, Peter The Effects of Hydrogen Annealing on Carbon Nanotube Field-Effect Transistors |
title | The Effects of Hydrogen Annealing on Carbon Nanotube Field-Effect Transistors |
title_full | The Effects of Hydrogen Annealing on Carbon Nanotube Field-Effect Transistors |
title_fullStr | The Effects of Hydrogen Annealing on Carbon Nanotube Field-Effect Transistors |
title_full_unstemmed | The Effects of Hydrogen Annealing on Carbon Nanotube Field-Effect Transistors |
title_short | The Effects of Hydrogen Annealing on Carbon Nanotube Field-Effect Transistors |
title_sort | effects of hydrogen annealing on carbon nanotube field-effect transistors |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8540963/ https://www.ncbi.nlm.nih.gov/pubmed/34684921 http://dx.doi.org/10.3390/nano11102481 |
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