Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from the high-frequency power amplifier to the high voltage devices used in power electronic systems. Development of GaN HEMT on Si-based substrate is currently the main focus of the industry to reduce the cost...

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Detalles Bibliográficos
Autores principales: Hsu, Lung-Hsing, Lai, Yung-Yu, Tu, Po-Tsung, Langpoklakpam, Catherine, Chang, Ya-Ting, Huang, Yu-Wen, Lee, Wen-Chung, Tzou, An-Jye, Cheng, Yuh-Jen, Lin, Chun-Hsiung, Kuo, Hao-Chung, Chang, Edward Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8541231/
https://www.ncbi.nlm.nih.gov/pubmed/34683210
http://dx.doi.org/10.3390/mi12101159

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8541231/
https://www.ncbi.nlm.nih.gov/pubmed/34683210
http://dx.doi.org/10.3390/mi12101159

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