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Crystal Growth of Cubic and Hexagonal GaN Bulk Alloys and Their Thermal-Vacuum-Evaporated Nano-Thin Films

In this study, we investigate a novel simple methodology to synthesize gallium nitride nanoparticles (GaN) that could be used as an active layer in light-emitting diode (LED) devices by combining the crystal growth technique with thermal vacuum evaporation. The characterizations of structural and op...

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Detalles Bibliográficos
Autores principales: Fathy, Marwa, Gad, Sara, Anis, Badawi, Kashyout, Abd El-Hady B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8541555/
https://www.ncbi.nlm.nih.gov/pubmed/34683292
http://dx.doi.org/10.3390/mi12101240
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author Fathy, Marwa
Gad, Sara
Anis, Badawi
Kashyout, Abd El-Hady B.
author_facet Fathy, Marwa
Gad, Sara
Anis, Badawi
Kashyout, Abd El-Hady B.
author_sort Fathy, Marwa
collection PubMed
description In this study, we investigate a novel simple methodology to synthesize gallium nitride nanoparticles (GaN) that could be used as an active layer in light-emitting diode (LED) devices by combining the crystal growth technique with thermal vacuum evaporation. The characterizations of structural and optical properties are carried out with different techniques to investigate the main featured properties of GaN bulk alloys and their thin films. Field emission scanning electron microscopy (FESEM) delivered images in bulk structures that show micro rods with an average diameter of 0.98 µm, while their thin films show regular microspheres with diameter ranging from 0.13 µm to 0.22 µm. X-ray diffraction (XRD) of the bulk crystals reveals a combination of 20% hexagonal and 80% cubic structure, and in thin films, it shows the orientation of the hexagonal phase. For HRTEM, these microspheres are composed of nanoparticles of GaN with diameter of 8–10 nm. For the optical behavior, a band gap of about from 2.33 to 3.1 eV is observed in both cases as alloy and thin film, respectively. This article highlights the fabrication of the major cubic structure of GaN bulk alloy with its thin films of high electron lifetime.
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spelling pubmed-85415552021-10-24 Crystal Growth of Cubic and Hexagonal GaN Bulk Alloys and Their Thermal-Vacuum-Evaporated Nano-Thin Films Fathy, Marwa Gad, Sara Anis, Badawi Kashyout, Abd El-Hady B. Micromachines (Basel) Article In this study, we investigate a novel simple methodology to synthesize gallium nitride nanoparticles (GaN) that could be used as an active layer in light-emitting diode (LED) devices by combining the crystal growth technique with thermal vacuum evaporation. The characterizations of structural and optical properties are carried out with different techniques to investigate the main featured properties of GaN bulk alloys and their thin films. Field emission scanning electron microscopy (FESEM) delivered images in bulk structures that show micro rods with an average diameter of 0.98 µm, while their thin films show regular microspheres with diameter ranging from 0.13 µm to 0.22 µm. X-ray diffraction (XRD) of the bulk crystals reveals a combination of 20% hexagonal and 80% cubic structure, and in thin films, it shows the orientation of the hexagonal phase. For HRTEM, these microspheres are composed of nanoparticles of GaN with diameter of 8–10 nm. For the optical behavior, a band gap of about from 2.33 to 3.1 eV is observed in both cases as alloy and thin film, respectively. This article highlights the fabrication of the major cubic structure of GaN bulk alloy with its thin films of high electron lifetime. MDPI 2021-10-13 /pmc/articles/PMC8541555/ /pubmed/34683292 http://dx.doi.org/10.3390/mi12101240 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Fathy, Marwa
Gad, Sara
Anis, Badawi
Kashyout, Abd El-Hady B.
Crystal Growth of Cubic and Hexagonal GaN Bulk Alloys and Their Thermal-Vacuum-Evaporated Nano-Thin Films
title Crystal Growth of Cubic and Hexagonal GaN Bulk Alloys and Their Thermal-Vacuum-Evaporated Nano-Thin Films
title_full Crystal Growth of Cubic and Hexagonal GaN Bulk Alloys and Their Thermal-Vacuum-Evaporated Nano-Thin Films
title_fullStr Crystal Growth of Cubic and Hexagonal GaN Bulk Alloys and Their Thermal-Vacuum-Evaporated Nano-Thin Films
title_full_unstemmed Crystal Growth of Cubic and Hexagonal GaN Bulk Alloys and Their Thermal-Vacuum-Evaporated Nano-Thin Films
title_short Crystal Growth of Cubic and Hexagonal GaN Bulk Alloys and Their Thermal-Vacuum-Evaporated Nano-Thin Films
title_sort crystal growth of cubic and hexagonal gan bulk alloys and their thermal-vacuum-evaporated nano-thin films
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8541555/
https://www.ncbi.nlm.nih.gov/pubmed/34683292
http://dx.doi.org/10.3390/mi12101240
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