Cargando…

Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer

In this work, we have investigated the influence of the transfer process on the monocrystalline graphene in terms of quality, morphology and electrical properties by analyzing the data obtained from optical microscopy, scanning electron microscopy, Raman spectroscopy and electrical characterizations...

Descripción completa

Detalles Bibliográficos
Autores principales: Ben Salk, Soukaina, Pandey, Reetu Raj, Pham, Phi H. Q., Zhou, Di, Wei, Wei, Cochez, Guillaume, Vignaud, Dominique, Pallecchi, Emiliano, Burke, Peter J., Happy, Henri
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8541598/
https://www.ncbi.nlm.nih.gov/pubmed/34684969
http://dx.doi.org/10.3390/nano11102528
_version_ 1784589270085795840
author Ben Salk, Soukaina
Pandey, Reetu Raj
Pham, Phi H. Q.
Zhou, Di
Wei, Wei
Cochez, Guillaume
Vignaud, Dominique
Pallecchi, Emiliano
Burke, Peter J.
Happy, Henri
author_facet Ben Salk, Soukaina
Pandey, Reetu Raj
Pham, Phi H. Q.
Zhou, Di
Wei, Wei
Cochez, Guillaume
Vignaud, Dominique
Pallecchi, Emiliano
Burke, Peter J.
Happy, Henri
author_sort Ben Salk, Soukaina
collection PubMed
description In this work, we have investigated the influence of the transfer process on the monocrystalline graphene in terms of quality, morphology and electrical properties by analyzing the data obtained from optical microscopy, scanning electron microscopy, Raman spectroscopy and electrical characterizations. The influence of Cu oxidation on graphene prior to the transfer is also discussed. Our results show that the controlled bubbling electrochemical delamination transfer is an easy and fast transfer technique suitable for transferring large single crystals graphene without degrading the graphene quality. Moreover, Raman spectroscopy investigation reveals that the Cu surface oxidation modifies the strain of the graphene film. We have observed that graphene laying on unoxidized Cu is subject to a biaxial strain in compression, while graphene on Cu oxide is subject to a biaxial strain in tension. However, after graphene was transferred to a host substrate, these strain effects were strongly reduced, leaving a homogeneous graphene on the substrate. The transferred single crystal graphene on silicon oxide substrate was used to fabricate transmission line method (TLM) devices. Electrical measurements show low contact resistance ~150 Ω·µm, which confirms the homogeneity and high quality of transferred graphene.
format Online
Article
Text
id pubmed-8541598
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-85415982021-10-24 Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer Ben Salk, Soukaina Pandey, Reetu Raj Pham, Phi H. Q. Zhou, Di Wei, Wei Cochez, Guillaume Vignaud, Dominique Pallecchi, Emiliano Burke, Peter J. Happy, Henri Nanomaterials (Basel) Article In this work, we have investigated the influence of the transfer process on the monocrystalline graphene in terms of quality, morphology and electrical properties by analyzing the data obtained from optical microscopy, scanning electron microscopy, Raman spectroscopy and electrical characterizations. The influence of Cu oxidation on graphene prior to the transfer is also discussed. Our results show that the controlled bubbling electrochemical delamination transfer is an easy and fast transfer technique suitable for transferring large single crystals graphene without degrading the graphene quality. Moreover, Raman spectroscopy investigation reveals that the Cu surface oxidation modifies the strain of the graphene film. We have observed that graphene laying on unoxidized Cu is subject to a biaxial strain in compression, while graphene on Cu oxide is subject to a biaxial strain in tension. However, after graphene was transferred to a host substrate, these strain effects were strongly reduced, leaving a homogeneous graphene on the substrate. The transferred single crystal graphene on silicon oxide substrate was used to fabricate transmission line method (TLM) devices. Electrical measurements show low contact resistance ~150 Ω·µm, which confirms the homogeneity and high quality of transferred graphene. MDPI 2021-09-27 /pmc/articles/PMC8541598/ /pubmed/34684969 http://dx.doi.org/10.3390/nano11102528 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Ben Salk, Soukaina
Pandey, Reetu Raj
Pham, Phi H. Q.
Zhou, Di
Wei, Wei
Cochez, Guillaume
Vignaud, Dominique
Pallecchi, Emiliano
Burke, Peter J.
Happy, Henri
Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer
title Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer
title_full Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer
title_fullStr Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer
title_full_unstemmed Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer
title_short Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer
title_sort physical and electrical characterization of synthesized millimeter size single crystal graphene, using controlled bubbling transfer
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8541598/
https://www.ncbi.nlm.nih.gov/pubmed/34684969
http://dx.doi.org/10.3390/nano11102528
work_keys_str_mv AT bensalksoukaina physicalandelectricalcharacterizationofsynthesizedmillimetersizesinglecrystalgrapheneusingcontrolledbubblingtransfer
AT pandeyreeturaj physicalandelectricalcharacterizationofsynthesizedmillimetersizesinglecrystalgrapheneusingcontrolledbubblingtransfer
AT phamphihq physicalandelectricalcharacterizationofsynthesizedmillimetersizesinglecrystalgrapheneusingcontrolledbubblingtransfer
AT zhoudi physicalandelectricalcharacterizationofsynthesizedmillimetersizesinglecrystalgrapheneusingcontrolledbubblingtransfer
AT weiwei physicalandelectricalcharacterizationofsynthesizedmillimetersizesinglecrystalgrapheneusingcontrolledbubblingtransfer
AT cochezguillaume physicalandelectricalcharacterizationofsynthesizedmillimetersizesinglecrystalgrapheneusingcontrolledbubblingtransfer
AT vignauddominique physicalandelectricalcharacterizationofsynthesizedmillimetersizesinglecrystalgrapheneusingcontrolledbubblingtransfer
AT pallecchiemiliano physicalandelectricalcharacterizationofsynthesizedmillimetersizesinglecrystalgrapheneusingcontrolledbubblingtransfer
AT burkepeterj physicalandelectricalcharacterizationofsynthesizedmillimetersizesinglecrystalgrapheneusingcontrolledbubblingtransfer
AT happyhenri physicalandelectricalcharacterizationofsynthesizedmillimetersizesinglecrystalgrapheneusingcontrolledbubblingtransfer