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Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer
In this work, we have investigated the influence of the transfer process on the monocrystalline graphene in terms of quality, morphology and electrical properties by analyzing the data obtained from optical microscopy, scanning electron microscopy, Raman spectroscopy and electrical characterizations...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8541598/ https://www.ncbi.nlm.nih.gov/pubmed/34684969 http://dx.doi.org/10.3390/nano11102528 |
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author | Ben Salk, Soukaina Pandey, Reetu Raj Pham, Phi H. Q. Zhou, Di Wei, Wei Cochez, Guillaume Vignaud, Dominique Pallecchi, Emiliano Burke, Peter J. Happy, Henri |
author_facet | Ben Salk, Soukaina Pandey, Reetu Raj Pham, Phi H. Q. Zhou, Di Wei, Wei Cochez, Guillaume Vignaud, Dominique Pallecchi, Emiliano Burke, Peter J. Happy, Henri |
author_sort | Ben Salk, Soukaina |
collection | PubMed |
description | In this work, we have investigated the influence of the transfer process on the monocrystalline graphene in terms of quality, morphology and electrical properties by analyzing the data obtained from optical microscopy, scanning electron microscopy, Raman spectroscopy and electrical characterizations. The influence of Cu oxidation on graphene prior to the transfer is also discussed. Our results show that the controlled bubbling electrochemical delamination transfer is an easy and fast transfer technique suitable for transferring large single crystals graphene without degrading the graphene quality. Moreover, Raman spectroscopy investigation reveals that the Cu surface oxidation modifies the strain of the graphene film. We have observed that graphene laying on unoxidized Cu is subject to a biaxial strain in compression, while graphene on Cu oxide is subject to a biaxial strain in tension. However, after graphene was transferred to a host substrate, these strain effects were strongly reduced, leaving a homogeneous graphene on the substrate. The transferred single crystal graphene on silicon oxide substrate was used to fabricate transmission line method (TLM) devices. Electrical measurements show low contact resistance ~150 Ω·µm, which confirms the homogeneity and high quality of transferred graphene. |
format | Online Article Text |
id | pubmed-8541598 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-85415982021-10-24 Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer Ben Salk, Soukaina Pandey, Reetu Raj Pham, Phi H. Q. Zhou, Di Wei, Wei Cochez, Guillaume Vignaud, Dominique Pallecchi, Emiliano Burke, Peter J. Happy, Henri Nanomaterials (Basel) Article In this work, we have investigated the influence of the transfer process on the monocrystalline graphene in terms of quality, morphology and electrical properties by analyzing the data obtained from optical microscopy, scanning electron microscopy, Raman spectroscopy and electrical characterizations. The influence of Cu oxidation on graphene prior to the transfer is also discussed. Our results show that the controlled bubbling electrochemical delamination transfer is an easy and fast transfer technique suitable for transferring large single crystals graphene without degrading the graphene quality. Moreover, Raman spectroscopy investigation reveals that the Cu surface oxidation modifies the strain of the graphene film. We have observed that graphene laying on unoxidized Cu is subject to a biaxial strain in compression, while graphene on Cu oxide is subject to a biaxial strain in tension. However, after graphene was transferred to a host substrate, these strain effects were strongly reduced, leaving a homogeneous graphene on the substrate. The transferred single crystal graphene on silicon oxide substrate was used to fabricate transmission line method (TLM) devices. Electrical measurements show low contact resistance ~150 Ω·µm, which confirms the homogeneity and high quality of transferred graphene. MDPI 2021-09-27 /pmc/articles/PMC8541598/ /pubmed/34684969 http://dx.doi.org/10.3390/nano11102528 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Ben Salk, Soukaina Pandey, Reetu Raj Pham, Phi H. Q. Zhou, Di Wei, Wei Cochez, Guillaume Vignaud, Dominique Pallecchi, Emiliano Burke, Peter J. Happy, Henri Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer |
title | Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer |
title_full | Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer |
title_fullStr | Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer |
title_full_unstemmed | Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer |
title_short | Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer |
title_sort | physical and electrical characterization of synthesized millimeter size single crystal graphene, using controlled bubbling transfer |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8541598/ https://www.ncbi.nlm.nih.gov/pubmed/34684969 http://dx.doi.org/10.3390/nano11102528 |
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