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Optimization of annealing conditions for Ag/p–GaN ohmic contacts
The electrical and optical properties of Ag/p–GaN contacts have been investigated as a function of the annealing temperature, oxygen concentration, and annealing time. Specific contact resistance (ρ(c)) values as low as 1.2 × 10(–4) Ω·cm(2) were obtained from the Ag/p–GaN contact annealed at 400 °C...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer Berlin Heidelberg
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8543412/ https://www.ncbi.nlm.nih.gov/pubmed/34720447 http://dx.doi.org/10.1007/s00339-021-05022-6 |
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author | Pan, Sai Lu, Youming Liang, Zhibin Xu, Chaojun Pan, Danfeng Zhou, Yugang Zhang, Rong Zheng, Youdou |
author_facet | Pan, Sai Lu, Youming Liang, Zhibin Xu, Chaojun Pan, Danfeng Zhou, Yugang Zhang, Rong Zheng, Youdou |
author_sort | Pan, Sai |
collection | PubMed |
description | The electrical and optical properties of Ag/p–GaN contacts have been investigated as a function of the annealing temperature, oxygen concentration, and annealing time. Specific contact resistance (ρ(c)) values as low as 1.2 × 10(–4) Ω·cm(2) were obtained from the Ag/p–GaN contact annealed at 400 °C for 60 s in ambient O(2)/N(2) (1:10). We found that the participation of oxygen improves the formation of ohmic contacts. Oxygen might remove the H in Mg–H complexes to activate the Mg acceptors and enhance Ga out-diffusion to form an Ag–Ga solid solution. We also found that the reflectivity of the Ag layer decreases with increasing annealing temperature in the O(2)-containing ambient environment. Thus, an optimal annealing condition of Ag/p–GaN for blue and green LEDs is suggested based on these results. We also used the suggested annealing conditions to form ohmic contacts on DUV LEDs and achieved good electrical performance. The forward voltages of UVC LEDs fabricated with annealed Ag contacts were 6.60 V (7.66 V) at a 40 mA (100 mA) injection current. |
format | Online Article Text |
id | pubmed-8543412 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | Springer Berlin Heidelberg |
record_format | MEDLINE/PubMed |
spelling | pubmed-85434122021-10-25 Optimization of annealing conditions for Ag/p–GaN ohmic contacts Pan, Sai Lu, Youming Liang, Zhibin Xu, Chaojun Pan, Danfeng Zhou, Yugang Zhang, Rong Zheng, Youdou Appl Phys A Mater Sci Process Article The electrical and optical properties of Ag/p–GaN contacts have been investigated as a function of the annealing temperature, oxygen concentration, and annealing time. Specific contact resistance (ρ(c)) values as low as 1.2 × 10(–4) Ω·cm(2) were obtained from the Ag/p–GaN contact annealed at 400 °C for 60 s in ambient O(2)/N(2) (1:10). We found that the participation of oxygen improves the formation of ohmic contacts. Oxygen might remove the H in Mg–H complexes to activate the Mg acceptors and enhance Ga out-diffusion to form an Ag–Ga solid solution. We also found that the reflectivity of the Ag layer decreases with increasing annealing temperature in the O(2)-containing ambient environment. Thus, an optimal annealing condition of Ag/p–GaN for blue and green LEDs is suggested based on these results. We also used the suggested annealing conditions to form ohmic contacts on DUV LEDs and achieved good electrical performance. The forward voltages of UVC LEDs fabricated with annealed Ag contacts were 6.60 V (7.66 V) at a 40 mA (100 mA) injection current. Springer Berlin Heidelberg 2021-10-25 2021 /pmc/articles/PMC8543412/ /pubmed/34720447 http://dx.doi.org/10.1007/s00339-021-05022-6 Text en © The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2021 This article is made available via the PMC Open Access Subset for unrestricted research re-use and secondary analysis in any form or by any means with acknowledgement of the original source. These permissions are granted for the duration of the World Health Organization (WHO) declaration of COVID-19 as a global pandemic. |
spellingShingle | Article Pan, Sai Lu, Youming Liang, Zhibin Xu, Chaojun Pan, Danfeng Zhou, Yugang Zhang, Rong Zheng, Youdou Optimization of annealing conditions for Ag/p–GaN ohmic contacts |
title | Optimization of annealing conditions for Ag/p–GaN ohmic contacts |
title_full | Optimization of annealing conditions for Ag/p–GaN ohmic contacts |
title_fullStr | Optimization of annealing conditions for Ag/p–GaN ohmic contacts |
title_full_unstemmed | Optimization of annealing conditions for Ag/p–GaN ohmic contacts |
title_short | Optimization of annealing conditions for Ag/p–GaN ohmic contacts |
title_sort | optimization of annealing conditions for ag/p–gan ohmic contacts |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8543412/ https://www.ncbi.nlm.nih.gov/pubmed/34720447 http://dx.doi.org/10.1007/s00339-021-05022-6 |
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