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Optimization of annealing conditions for Ag/p–GaN ohmic contacts
The electrical and optical properties of Ag/p–GaN contacts have been investigated as a function of the annealing temperature, oxygen concentration, and annealing time. Specific contact resistance (ρ(c)) values as low as 1.2 × 10(–4) Ω·cm(2) were obtained from the Ag/p–GaN contact annealed at 400 °C...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer Berlin Heidelberg
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8543412/ https://www.ncbi.nlm.nih.gov/pubmed/34720447 http://dx.doi.org/10.1007/s00339-021-05022-6 |