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Thickness-dependent in-plane anisotropy of GaTe phonons
Gallium Telluride (GaTe), a layered material with monoclinic crystal structure, has recently attracted a lot of attention due to its unique physical properties and potential applications for angle-resolved photonics and electronics, where optical anisotropies are important. Despite a few reports on...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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Nature Publishing Group UK
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8551200/ https://www.ncbi.nlm.nih.gov/pubmed/34707186 http://dx.doi.org/10.1038/s41598-021-00673-0 |
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author | Hoang, Nguyen The Lee, Je-Ho Vu, Thi Hoa Cho, Sunglae Seong, Maeng-Je |
author_facet | Hoang, Nguyen The Lee, Je-Ho Vu, Thi Hoa Cho, Sunglae Seong, Maeng-Je |
author_sort | Hoang, Nguyen The |
collection | PubMed |
description | Gallium Telluride (GaTe), a layered material with monoclinic crystal structure, has recently attracted a lot of attention due to its unique physical properties and potential applications for angle-resolved photonics and electronics, where optical anisotropies are important. Despite a few reports on the in-plane anisotropies of GaTe, a comprehensive understanding of them remained unsatisfactory to date. In this work, we investigated thickness-dependent in-plane anisotropies of the 13 Raman-active modes and one Raman-inactive mode of GaTe by using angle-resolved polarized Raman spectroscopy, under both parallel and perpendicular polarization configurations in the spectral range from 20 to 300 cm(−1). Raman modes of GaTe revealed distinctly different thickness-dependent anisotropies in parallel polarization configuration while nearly unchanged for the perpendicular configuration. Especially, three A(g) modes at 40.2 ([Formula: see text] ), 152.5 ([Formula: see text] ), and 283.8 ([Formula: see text] ) cm(−1) exhibited an evident variation in anisotropic behavior as decreasing thickness down to 9 nm. The observed anisotropies were thoroughly explained by adopting the calculated interference effect and the semiclassical complex Raman tensor analysis. |
format | Online Article Text |
id | pubmed-8551200 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-85512002021-10-28 Thickness-dependent in-plane anisotropy of GaTe phonons Hoang, Nguyen The Lee, Je-Ho Vu, Thi Hoa Cho, Sunglae Seong, Maeng-Je Sci Rep Article Gallium Telluride (GaTe), a layered material with monoclinic crystal structure, has recently attracted a lot of attention due to its unique physical properties and potential applications for angle-resolved photonics and electronics, where optical anisotropies are important. Despite a few reports on the in-plane anisotropies of GaTe, a comprehensive understanding of them remained unsatisfactory to date. In this work, we investigated thickness-dependent in-plane anisotropies of the 13 Raman-active modes and one Raman-inactive mode of GaTe by using angle-resolved polarized Raman spectroscopy, under both parallel and perpendicular polarization configurations in the spectral range from 20 to 300 cm(−1). Raman modes of GaTe revealed distinctly different thickness-dependent anisotropies in parallel polarization configuration while nearly unchanged for the perpendicular configuration. Especially, three A(g) modes at 40.2 ([Formula: see text] ), 152.5 ([Formula: see text] ), and 283.8 ([Formula: see text] ) cm(−1) exhibited an evident variation in anisotropic behavior as decreasing thickness down to 9 nm. The observed anisotropies were thoroughly explained by adopting the calculated interference effect and the semiclassical complex Raman tensor analysis. Nature Publishing Group UK 2021-10-27 /pmc/articles/PMC8551200/ /pubmed/34707186 http://dx.doi.org/10.1038/s41598-021-00673-0 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Hoang, Nguyen The Lee, Je-Ho Vu, Thi Hoa Cho, Sunglae Seong, Maeng-Je Thickness-dependent in-plane anisotropy of GaTe phonons |
title | Thickness-dependent in-plane anisotropy of GaTe phonons |
title_full | Thickness-dependent in-plane anisotropy of GaTe phonons |
title_fullStr | Thickness-dependent in-plane anisotropy of GaTe phonons |
title_full_unstemmed | Thickness-dependent in-plane anisotropy of GaTe phonons |
title_short | Thickness-dependent in-plane anisotropy of GaTe phonons |
title_sort | thickness-dependent in-plane anisotropy of gate phonons |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8551200/ https://www.ncbi.nlm.nih.gov/pubmed/34707186 http://dx.doi.org/10.1038/s41598-021-00673-0 |
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