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Thickness-dependent in-plane anisotropy of GaTe phonons

Gallium Telluride (GaTe), a layered material with monoclinic crystal structure, has recently attracted a lot of attention due to its unique physical properties and potential applications for angle-resolved photonics and electronics, where optical anisotropies are important. Despite a few reports on...

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Autores principales: Hoang, Nguyen The, Lee, Je-Ho, Vu, Thi Hoa, Cho, Sunglae, Seong, Maeng-Je
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8551200/
https://www.ncbi.nlm.nih.gov/pubmed/34707186
http://dx.doi.org/10.1038/s41598-021-00673-0
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author Hoang, Nguyen The
Lee, Je-Ho
Vu, Thi Hoa
Cho, Sunglae
Seong, Maeng-Je
author_facet Hoang, Nguyen The
Lee, Je-Ho
Vu, Thi Hoa
Cho, Sunglae
Seong, Maeng-Je
author_sort Hoang, Nguyen The
collection PubMed
description Gallium Telluride (GaTe), a layered material with monoclinic crystal structure, has recently attracted a lot of attention due to its unique physical properties and potential applications for angle-resolved photonics and electronics, where optical anisotropies are important. Despite a few reports on the in-plane anisotropies of GaTe, a comprehensive understanding of them remained unsatisfactory to date. In this work, we investigated thickness-dependent in-plane anisotropies of the 13 Raman-active modes and one Raman-inactive mode of GaTe by using angle-resolved polarized Raman spectroscopy, under both parallel and perpendicular polarization configurations in the spectral range from 20 to 300 cm(−1). Raman modes of GaTe revealed distinctly different thickness-dependent anisotropies in parallel polarization configuration while nearly unchanged for the perpendicular configuration. Especially, three A(g) modes at 40.2 ([Formula: see text] ), 152.5 ([Formula: see text] ), and 283.8 ([Formula: see text] ) cm(−1) exhibited an evident variation in anisotropic behavior as decreasing thickness down to 9 nm. The observed anisotropies were thoroughly explained by adopting the calculated interference effect and the semiclassical complex Raman tensor analysis.
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spelling pubmed-85512002021-10-28 Thickness-dependent in-plane anisotropy of GaTe phonons Hoang, Nguyen The Lee, Je-Ho Vu, Thi Hoa Cho, Sunglae Seong, Maeng-Je Sci Rep Article Gallium Telluride (GaTe), a layered material with monoclinic crystal structure, has recently attracted a lot of attention due to its unique physical properties and potential applications for angle-resolved photonics and electronics, where optical anisotropies are important. Despite a few reports on the in-plane anisotropies of GaTe, a comprehensive understanding of them remained unsatisfactory to date. In this work, we investigated thickness-dependent in-plane anisotropies of the 13 Raman-active modes and one Raman-inactive mode of GaTe by using angle-resolved polarized Raman spectroscopy, under both parallel and perpendicular polarization configurations in the spectral range from 20 to 300 cm(−1). Raman modes of GaTe revealed distinctly different thickness-dependent anisotropies in parallel polarization configuration while nearly unchanged for the perpendicular configuration. Especially, three A(g) modes at 40.2 ([Formula: see text] ), 152.5 ([Formula: see text] ), and 283.8 ([Formula: see text] ) cm(−1) exhibited an evident variation in anisotropic behavior as decreasing thickness down to 9 nm. The observed anisotropies were thoroughly explained by adopting the calculated interference effect and the semiclassical complex Raman tensor analysis. Nature Publishing Group UK 2021-10-27 /pmc/articles/PMC8551200/ /pubmed/34707186 http://dx.doi.org/10.1038/s41598-021-00673-0 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Hoang, Nguyen The
Lee, Je-Ho
Vu, Thi Hoa
Cho, Sunglae
Seong, Maeng-Je
Thickness-dependent in-plane anisotropy of GaTe phonons
title Thickness-dependent in-plane anisotropy of GaTe phonons
title_full Thickness-dependent in-plane anisotropy of GaTe phonons
title_fullStr Thickness-dependent in-plane anisotropy of GaTe phonons
title_full_unstemmed Thickness-dependent in-plane anisotropy of GaTe phonons
title_short Thickness-dependent in-plane anisotropy of GaTe phonons
title_sort thickness-dependent in-plane anisotropy of gate phonons
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8551200/
https://www.ncbi.nlm.nih.gov/pubmed/34707186
http://dx.doi.org/10.1038/s41598-021-00673-0
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