Revealing the Significance of Catalytic and Alkyl Exchange Reactions during GaAs and GaP Growth by Metal Organic Vapor Phase Epitaxy

[Image: see text] Tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) are getting more and more established as group V precursors for the growth of V/III semiconductors by metal organic vapor phase epitaxy (MOVPE). Due to this development, the thermal decomposition of these precursors was st...

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Detalles Bibliográficos
Autores principales: Maßmeyer, Oliver, Haust, Johannes, Hepp, Thilo, Günkel, Robin, Glowatzki, Johannes, von Hänisch, Carsten, Stolz, Wolfgang, Volz, Kerstin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8552475/
https://www.ncbi.nlm.nih.gov/pubmed/34723020
http://dx.doi.org/10.1021/acsomega.1c04316

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