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Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V(2)O(3)
In solids, strong repulsion between electrons can inhibit their movement and result in a “Mott” metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-l...
Autores principales: | , , , , , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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American Association for the Advancement of Science
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8565841/ https://www.ncbi.nlm.nih.gov/pubmed/34730993 http://dx.doi.org/10.1126/sciadv.abj1164 |
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author | Thees, Maximilian Lee, Min-Han Bouwmeester, Rosa Luca Rezende-Gonçalves, Pedro H. David, Emma Zimmers, Alexandre Fortuna, Franck Frantzeskakis, Emmanouil Vargas, Nicolas M. Kalcheim, Yoav Le Fèvre, Patrick Horiba, Koji Kumigashira, Hiroshi Biermann, Silke Trastoy, Juan Rozenberg, Marcelo J. Schuller, Ivan K. Santander-Syro, Andrés F. |
author_facet | Thees, Maximilian Lee, Min-Han Bouwmeester, Rosa Luca Rezende-Gonçalves, Pedro H. David, Emma Zimmers, Alexandre Fortuna, Franck Frantzeskakis, Emmanouil Vargas, Nicolas M. Kalcheim, Yoav Le Fèvre, Patrick Horiba, Koji Kumigashira, Hiroshi Biermann, Silke Trastoy, Juan Rozenberg, Marcelo J. Schuller, Ivan K. Santander-Syro, Andrés F. |
author_sort | Thees, Maximilian |
collection | PubMed |
description | In solids, strong repulsion between electrons can inhibit their movement and result in a “Mott” metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-like state due to increased interactions. However, observing the MIT in terms of the energy- and momentum-resolved electronic structure of the system, the only direct way to probe both itinerant and localized states, has been elusive. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that in V(2)O(3), the temperature-induced MIT is characterized by the progressive disappearance of its itinerant conduction band, without any change in its energy-momentum dispersion, and the simultaneous shift to larger binding energies of a quasi-localized state initially located near the Fermi level. |
format | Online Article Text |
id | pubmed-8565841 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | American Association for the Advancement of Science |
record_format | MEDLINE/PubMed |
spelling | pubmed-85658412021-11-17 Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V(2)O(3) Thees, Maximilian Lee, Min-Han Bouwmeester, Rosa Luca Rezende-Gonçalves, Pedro H. David, Emma Zimmers, Alexandre Fortuna, Franck Frantzeskakis, Emmanouil Vargas, Nicolas M. Kalcheim, Yoav Le Fèvre, Patrick Horiba, Koji Kumigashira, Hiroshi Biermann, Silke Trastoy, Juan Rozenberg, Marcelo J. Schuller, Ivan K. Santander-Syro, Andrés F. Sci Adv Physical and Materials Sciences In solids, strong repulsion between electrons can inhibit their movement and result in a “Mott” metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-like state due to increased interactions. However, observing the MIT in terms of the energy- and momentum-resolved electronic structure of the system, the only direct way to probe both itinerant and localized states, has been elusive. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that in V(2)O(3), the temperature-induced MIT is characterized by the progressive disappearance of its itinerant conduction band, without any change in its energy-momentum dispersion, and the simultaneous shift to larger binding energies of a quasi-localized state initially located near the Fermi level. American Association for the Advancement of Science 2021-11-03 /pmc/articles/PMC8565841/ /pubmed/34730993 http://dx.doi.org/10.1126/sciadv.abj1164 Text en Copyright © 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). https://creativecommons.org/licenses/by-nc/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (https://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited. |
spellingShingle | Physical and Materials Sciences Thees, Maximilian Lee, Min-Han Bouwmeester, Rosa Luca Rezende-Gonçalves, Pedro H. David, Emma Zimmers, Alexandre Fortuna, Franck Frantzeskakis, Emmanouil Vargas, Nicolas M. Kalcheim, Yoav Le Fèvre, Patrick Horiba, Koji Kumigashira, Hiroshi Biermann, Silke Trastoy, Juan Rozenberg, Marcelo J. Schuller, Ivan K. Santander-Syro, Andrés F. Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V(2)O(3) |
title | Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V(2)O(3) |
title_full | Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V(2)O(3) |
title_fullStr | Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V(2)O(3) |
title_full_unstemmed | Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V(2)O(3) |
title_short | Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V(2)O(3) |
title_sort | imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in v(2)o(3) |
topic | Physical and Materials Sciences |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8565841/ https://www.ncbi.nlm.nih.gov/pubmed/34730993 http://dx.doi.org/10.1126/sciadv.abj1164 |
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