Role of Interfacial Oxide in the Preferred Orientation of Ga(2)O(3) on Si for Deep Ultraviolet Photodetectors

[Image: see text] It is generally known that a layer of amorphous silicon oxide (SiO(2)) naturally exists on the surface of silicon, resulting in the growth of gallium oxide (Ga(2)O(3)) that is no longer affected by substrate crystallinity during sputtering. This work highlights the formation energy between the native amorphous nano-oxide film formed on the Si substrate and monoclinic β-Ga(2)O(3) dominating the preferred orientation prepared for deep ultraviolet photodetectors. The latter were deposited on p-type silicon (p-Si) with (111) orientation using radio frequency sputtering at 600 °C and post rapid thermal annealing (RTA). The X-ray diffraction (XRD) results indicate both as-deposited and postannealing films with the (400) preferred orientation for a layer thickness of 100 nm. However, slight random orientation with the amorphous structure is mixed in the preferred one for the as-deposited film with a thickness of 200 nm and reduced after being annealed at 800 °C, which is observed by XRD and transmission electron microscopy. Meanwhile, thermal-induced massive twin boundaries (TBs) and stacking faults (SFs) were generated when annealed at 1000 °C, owing to the relaxation of lattice strain by the coherent interface. The interfacial bonding energy per unit area (E(i)) between β-Ga(2)O(3) films with various facets ((001), (010), (100), and (2̅01)) and amorphous SiO(2) was calculated using density functional theory. The E(i) of β-Ga(2)O(3) (100)/SiO(2) reveals the highest value (0.289 eV/Å(2)), which is consistent with the (100) preferred orientation of deposited films. The (100) preferred orientation is the driving force for TBs and SFs. The discrimination of responsivities and the photo/dark current contrast ratio (I(ph)/I(dark)) are inversely proportional to the amorphous structure, grain boundaries, TBs, and SFs. Therefore, optimum metal–semiconductor–metal photodetector performance is achieved for RTA-treated samples at 800 °C with an I(ph)/I(dark) of 3.91 × 10(2) and a responsivity of 0.702 A/W (λ(peak) = 230 nm) at 5 V bias for a 200 nm thin film.