Role of Interfacial Oxide in the Preferred Orientation of Ga(2)O(3) on Si for Deep Ultraviolet Photodetectors

[Image: see text] It is generally known that a layer of amorphous silicon oxide (SiO(2)) naturally exists on the surface of silicon, resulting in the growth of gallium oxide (Ga(2)O(3)) that is no longer affected by substrate crystallinity during sputtering. This work highlights the formation energy...

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Detalles Bibliográficos
Autores principales: Yen, Chao-Chun, Huang, Tsun-Min, Chen, Po-Wei, Chang, Kai-Ping, Wu, Wan-Yu, Wuu, Dong-Sing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8567405/
https://www.ncbi.nlm.nih.gov/pubmed/34746603
http://dx.doi.org/10.1021/acsomega.1c04380

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8567405/
https://www.ncbi.nlm.nih.gov/pubmed/34746603
http://dx.doi.org/10.1021/acsomega.1c04380

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