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Role of Interfacial Oxide in the Preferred Orientation of Ga(2)O(3) on Si for Deep Ultraviolet Photodetectors
[Image: see text] It is generally known that a layer of amorphous silicon oxide (SiO(2)) naturally exists on the surface of silicon, resulting in the growth of gallium oxide (Ga(2)O(3)) that is no longer affected by substrate crystallinity during sputtering. This work highlights the formation energy...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2021
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8567405/ https://www.ncbi.nlm.nih.gov/pubmed/34746603 http://dx.doi.org/10.1021/acsomega.1c04380 |