Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications

In this work, a low-power plasma oxidation surface treatment followed by Al(2)O(3) gate dielectric deposition technique is adopted to improve device performance of the enhancement-mode (E-mode) AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) intended for application...

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Detalles Bibliográficos
Autores principales: Wang, Chun, Chen, Yu-Chiao, Hsu, Heng-Tung, Tsao, Yi-Fan, Lin, Yueh-Chin, Dee, Chang-Fu, Chang, Edward-Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8585215/
https://www.ncbi.nlm.nih.gov/pubmed/34772078
http://dx.doi.org/10.3390/ma14216558
Descripción
Sumario:In this work, a low-power plasma oxidation surface treatment followed by Al(2)O(3) gate dielectric deposition technique is adopted to improve device performance of the enhancement-mode (E-mode) AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) intended for applications at millimeter-wave frequencies. The fabricated device exhibited a threshold voltage (V(th)) of 0.13 V and a maximum transconductance (g(m)) of 484 (mS/mm). At 38 GHz, an output power density of 3.22 W/mm with a power-added efficiency (PAE) of 34.83% were achieved. Such superior performance was mainly attributed to the high-quality Al(2)O(3) layer with a smooth surface which also suppressed the current collapse phenomenon.

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