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Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits
Polyimides (PIs) are widely utilized polymeric materials for high-temperature plastics, adhesives, dielectrics, nonlinear optical materials, flexible hard-coating films, and substrates for flexible electronics. PIs can be facilely mass-produced through factory methods, so the industrial application...
Autores principales: | , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8586921/ https://www.ncbi.nlm.nih.gov/pubmed/34771272 http://dx.doi.org/10.3390/polym13213715 |
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author | Wang, Rixuan Lee, Joonjung Hong, Jisu Kwon, Hyeok-jin Ye, Heqing Park, Juhyun Park, Chan Eon Kim, Joon Ho Choi, Hyun Ho Eom, Kyuyoung Kim, Se Hyun |
author_facet | Wang, Rixuan Lee, Joonjung Hong, Jisu Kwon, Hyeok-jin Ye, Heqing Park, Juhyun Park, Chan Eon Kim, Joon Ho Choi, Hyun Ho Eom, Kyuyoung Kim, Se Hyun |
author_sort | Wang, Rixuan |
collection | PubMed |
description | Polyimides (PIs) are widely utilized polymeric materials for high-temperature plastics, adhesives, dielectrics, nonlinear optical materials, flexible hard-coating films, and substrates for flexible electronics. PIs can be facilely mass-produced through factory methods, so the industrial application value is limitless. Herein, we synthesized a typical poly(amic acid) (PAA) precursor-based solution through an industrialized reactor for mass production and applied the prepared solution to form thin films of PI using thermal imidization. The deposited PI thin films were successfully applied as gate dielectrics for organic field-effect transistors (OFETs). The PI layers showed suitable characteristics for dielectrics, such as a smooth surface, low leakage current density, uniform dielectric constant (k) values regardless of frequency, and compatibility with organic semiconductors. Utilizing this PI layer, we were able to fabricate electrically stable operated OFETs, which exhibited a threshold voltage shift lower than 1 V under bias-stress conditions and a field-effect mobility of 4.29 cm(2) V(−1) s(−1). Moreover, integrated logic gates were manufactured using these well-operated OFETs and displayed suitable operation behavior. |
format | Online Article Text |
id | pubmed-8586921 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-85869212021-11-13 Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits Wang, Rixuan Lee, Joonjung Hong, Jisu Kwon, Hyeok-jin Ye, Heqing Park, Juhyun Park, Chan Eon Kim, Joon Ho Choi, Hyun Ho Eom, Kyuyoung Kim, Se Hyun Polymers (Basel) Article Polyimides (PIs) are widely utilized polymeric materials for high-temperature plastics, adhesives, dielectrics, nonlinear optical materials, flexible hard-coating films, and substrates for flexible electronics. PIs can be facilely mass-produced through factory methods, so the industrial application value is limitless. Herein, we synthesized a typical poly(amic acid) (PAA) precursor-based solution through an industrialized reactor for mass production and applied the prepared solution to form thin films of PI using thermal imidization. The deposited PI thin films were successfully applied as gate dielectrics for organic field-effect transistors (OFETs). The PI layers showed suitable characteristics for dielectrics, such as a smooth surface, low leakage current density, uniform dielectric constant (k) values regardless of frequency, and compatibility with organic semiconductors. Utilizing this PI layer, we were able to fabricate electrically stable operated OFETs, which exhibited a threshold voltage shift lower than 1 V under bias-stress conditions and a field-effect mobility of 4.29 cm(2) V(−1) s(−1). Moreover, integrated logic gates were manufactured using these well-operated OFETs and displayed suitable operation behavior. MDPI 2021-10-28 /pmc/articles/PMC8586921/ /pubmed/34771272 http://dx.doi.org/10.3390/polym13213715 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Wang, Rixuan Lee, Joonjung Hong, Jisu Kwon, Hyeok-jin Ye, Heqing Park, Juhyun Park, Chan Eon Kim, Joon Ho Choi, Hyun Ho Eom, Kyuyoung Kim, Se Hyun Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits |
title | Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits |
title_full | Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits |
title_fullStr | Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits |
title_full_unstemmed | Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits |
title_short | Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits |
title_sort | mass-synthesized solution-processable polyimide gate dielectrics for electrically stable operating ofets and integrated circuits |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8586921/ https://www.ncbi.nlm.nih.gov/pubmed/34771272 http://dx.doi.org/10.3390/polym13213715 |
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