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Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology

A three-axis micro magnetic sensor (MS) is developed based on the standard 180 nm complementary metal oxide semiconductor (CMOS) technology. The MS designs two magnetic sensing elements (MSEs), which consists of an x/y-MSE and an z-MSE, to reduce cross-sensitivity. The x/y-MSE is constructed by an x...

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Autores principales: Wu, Chi-Han, Shih, Po-Jen, Tsai, Yao-Chuan, Dai, Ching-Liang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8587165/
https://www.ncbi.nlm.nih.gov/pubmed/34770260
http://dx.doi.org/10.3390/s21216953
_version_ 1784598077689036800
author Wu, Chi-Han
Shih, Po-Jen
Tsai, Yao-Chuan
Dai, Ching-Liang
author_facet Wu, Chi-Han
Shih, Po-Jen
Tsai, Yao-Chuan
Dai, Ching-Liang
author_sort Wu, Chi-Han
collection PubMed
description A three-axis micro magnetic sensor (MS) is developed based on the standard 180 nm complementary metal oxide semiconductor (CMOS) technology. The MS designs two magnetic sensing elements (MSEs), which consists of an x/y-MSE and an z-MSE, to reduce cross-sensitivity. The x/y-MSE is constructed by an x-MSE and an y-MSE that are respectively employed to detect in the x- and y-direction magnetic field (MF). The z-MSE is used to sense in the z-direction MF. The x/y-MSE, which is constructed by two magnetotransistors, designs four additional collectors that are employed to increase the sensing current and to enhance the sensitivity of the MS. The Sentaurus TCAD software simulates the characteristic of the MS. The measured results reveal that the MS sensitivity is 534 mV/T in the x-direction MF, 525 mV/T in the y-direction MF and 119 mV/T in the z-axis MF.
format Online
Article
Text
id pubmed-8587165
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-85871652021-11-13 Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology Wu, Chi-Han Shih, Po-Jen Tsai, Yao-Chuan Dai, Ching-Liang Sensors (Basel) Article A three-axis micro magnetic sensor (MS) is developed based on the standard 180 nm complementary metal oxide semiconductor (CMOS) technology. The MS designs two magnetic sensing elements (MSEs), which consists of an x/y-MSE and an z-MSE, to reduce cross-sensitivity. The x/y-MSE is constructed by an x-MSE and an y-MSE that are respectively employed to detect in the x- and y-direction magnetic field (MF). The z-MSE is used to sense in the z-direction MF. The x/y-MSE, which is constructed by two magnetotransistors, designs four additional collectors that are employed to increase the sensing current and to enhance the sensitivity of the MS. The Sentaurus TCAD software simulates the characteristic of the MS. The measured results reveal that the MS sensitivity is 534 mV/T in the x-direction MF, 525 mV/T in the y-direction MF and 119 mV/T in the z-axis MF. MDPI 2021-10-20 /pmc/articles/PMC8587165/ /pubmed/34770260 http://dx.doi.org/10.3390/s21216953 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wu, Chi-Han
Shih, Po-Jen
Tsai, Yao-Chuan
Dai, Ching-Liang
Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology
title Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology
title_full Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology
title_fullStr Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology
title_full_unstemmed Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology
title_short Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology
title_sort manufacturing and characterization of three-axis magnetic sensors using the standard 180 nm cmos technology
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8587165/
https://www.ncbi.nlm.nih.gov/pubmed/34770260
http://dx.doi.org/10.3390/s21216953
work_keys_str_mv AT wuchihan manufacturingandcharacterizationofthreeaxismagneticsensorsusingthestandard180nmcmostechnology
AT shihpojen manufacturingandcharacterizationofthreeaxismagneticsensorsusingthestandard180nmcmostechnology
AT tsaiyaochuan manufacturingandcharacterizationofthreeaxismagneticsensorsusingthestandard180nmcmostechnology
AT daichingliang manufacturingandcharacterizationofthreeaxismagneticsensorsusingthestandard180nmcmostechnology