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Chemistry and Charge Trapping at the Interface of Silver and Ultrathin Layers of Zinc Oxide
[Image: see text] Zinc oxide, a wide-band-gap semiconductor, shows intriguing optoelectronic properties when coupled with Ag. Specifically, an absorbance band in the visible range that is not apparent in the separated materials emerges when the interface is formed. Interestingly, photoexcitation of...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2021
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8592502/ https://www.ncbi.nlm.nih.gov/pubmed/34628851 http://dx.doi.org/10.1021/acsami.1c11566 |