High electron mobility in strained GaAs nanowires

Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in nanoscale dimensions. Concerning the intrinsic transport properties of electrons in nanowires, relatively high mobility values that approach those...

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Detalles Bibliográficos
Autores principales: Balaghi, Leila, Shan, Si, Fotev, Ivan, Moebus, Finn, Rana, Rakesh, Venanzi, Tommaso, Hübner, René, Mikolajick, Thomas, Schneider, Harald, Helm, Manfred, Pashkin, Alexej, Dimakis, Emmanouil
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8599471/
https://www.ncbi.nlm.nih.gov/pubmed/34789741
http://dx.doi.org/10.1038/s41467-021-27006-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8599471/
https://www.ncbi.nlm.nih.gov/pubmed/34789741
http://dx.doi.org/10.1038/s41467-021-27006-z

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