Cargando…
Inducing Half-Metallicity in Monolayer MoSi(2)N(4)
[Image: see text] First-principles calculations are performed for the recently synthesized monolayer MoSi(2)N(4) [Science 369, 670–674 (2020)]. We show that N vacancies are energetically favorable over Si vacancies, except for Fermi energies close to the conduction band edge in the N-rich environmen...
Autores principales: | Ray, Avijeet, Tyagi, Shubham, Singh, Nirpendra, Schwingenschlögl, Udo |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2021
|
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8600515/ https://www.ncbi.nlm.nih.gov/pubmed/34805668 http://dx.doi.org/10.1021/acsomega.1c03444 |
Ejemplares similares
-
Theoretical Insights into the Hydrogen Evolution Reaction
on VGe(2)N(4) and NbGe(2)N(4) Monolayers
por: Sahoo, Mihir Ranjan, et al.
Publicado: (2022) -
Engineering electronic structures and optical properties of a MoSi(2)N(4) monolayer via modulating surface hydrogen chemisorption
por: Zhang, Yumei, et al.
Publicado: (2023) -
Electronic and Spintronic Properties of Armchair MoSi(2)N(4) Nanoribbons Doped by 3D Transition Metals
por: Su, Xiao-Qian, et al.
Publicado: (2023) -
Microstructure and Properties of Thermal Electrode Material Si(3)N(4)–MoSi(2) Composite Ceramics
por: Feng, Lichao, et al.
Publicado: (2018) -
Discovery of 2D van der Waals layered MoSi(2)N(4) family
por: Novoselov, Kostya S
Publicado: (2020)