Thermal Conductivity of Large-Area Polycrystalline MoSe(2) Films Grown by Chemical Vapor Deposition

[Image: see text] It is of great importance to understand the thermal properties of MoSe(2) films for electronic and optoelectronic applications. In this work, large-area polycrystalline MoSe(2) films are prepared using a low-cost, controllable, large-scale, and repeatable chemical vapor deposition method, which facilitates direct device fabrication. Raman spectra and X-ray diffraction patterns indicate a hexagonal (2H) crystal structure of the MoSe(2) film. Ellipsometric spectra analysis indicates that the optical band gap of the MoSe(2) film is estimated to be ∼1.23 eV. From the analysis of the temperature-dependent and laser-power-dependent Raman spectra, the thermal conductivity of the suspended MoSe(2) films is found to be ∼28.48 W/(m·K) at room temperature. The results can provide useful guidance for an effective thermal management of large-area polycrystalline MoSe(2)-based electronic and optoelectronic devices.