Atomic-scale fatigue mechanism of ferroelectric tunnel junctions

Ferroelectric tunnel junctions (FTJs) are promising candidates for next-generation memories due to fast read/write speeds and low-power consumptions. Here, we investigate resistance fatigue of FTJs, which is performed on Pt/BaTiO(3)/Nb:SrTiO(3) devices. By direct observations of the 5–unit cell–thic...

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Detalles Bibliográficos
Autores principales: Yang, Yihao, Wu, Ming, Zheng, Xingwen, Zheng, Chunyan, Xu, Jibo, Xu, Zhiyu, Li, Xiaofei, Lou, Xiaojie, Wu, Di, Liu, Xiaohui, Pennycook, Stephen J., Wen, Zheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2021
Materias:
Physical and Materials Sciences
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8612688/
https://www.ncbi.nlm.nih.gov/pubmed/34818041
http://dx.doi.org/10.1126/sciadv.abh2716

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8612688/
https://www.ncbi.nlm.nih.gov/pubmed/34818041
http://dx.doi.org/10.1126/sciadv.abh2716

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