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Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. Materials 2021, 14, 5472
| Formato: | Online Artículo Texto |
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| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8618250/ https://www.ncbi.nlm.nih.gov/pubmed/34832506 http://dx.doi.org/10.3390/ma14226969 |
| _version_ | 1784604702449598464 |
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| collection | PubMed |
| description | |
| format | Online Article Text |
| id | pubmed-8618250 |
| institution | National Center for Biotechnology Information |
| language | English |
| publishDate | 2021 |
| publisher | MDPI |
| record_format | MEDLINE/PubMed |
| spelling | pubmed-86182502021-11-27 Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. Materials 2021, 14, 5472 Materials (Basel) Correction MDPI 2021-11-18 /pmc/articles/PMC8618250/ /pubmed/34832506 http://dx.doi.org/10.3390/ma14226969 Text en © 2021 by the author. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
| spellingShingle | Correction Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. Materials 2021, 14, 5472 |
| title | Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. Materials 2021, 14, 5472 |
| title_full | Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. Materials 2021, 14, 5472 |
| title_fullStr | Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. Materials 2021, 14, 5472 |
| title_full_unstemmed | Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. Materials 2021, 14, 5472 |
| title_short | Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. Materials 2021, 14, 5472 |
| title_sort | correction: kirste et al. structural analysis of low defect ammonothermally grown gan wafers by borrmann effect x-ray topography. materials 2021, 14, 5472 |
| topic | Correction |
| url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8618250/ https://www.ncbi.nlm.nih.gov/pubmed/34832506 http://dx.doi.org/10.3390/ma14226969 |
| work_keys_str_mv | AT correctionkirsteetalstructuralanalysisoflowdefectammonothermallygrownganwafersbyborrmanneffectxraytopographymaterials2021145472 |