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Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect
Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8618643/ https://www.ncbi.nlm.nih.gov/pubmed/34833941 http://dx.doi.org/10.3390/molecules26226849 |
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author | Fan, Yan Wang, Tao Qiu, Yinwei Yang, Yinli Pan, Qiubo Zheng, Jun Zeng, Songwei Liu, Wei Lou, Gang Chen, Liang |
author_facet | Fan, Yan Wang, Tao Qiu, Yinwei Yang, Yinli Pan, Qiubo Zheng, Jun Zeng, Songwei Liu, Wei Lou, Gang Chen, Liang |
author_sort | Fan, Yan |
collection | PubMed |
description | Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I–V curve of the pGO vertical p–n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p–n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p–n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n–type semiconductor; theoretical calculations and research show that GO is generally a p–type semiconductor with a bandgap, thereby forming a p–n junction. Our work provides a method for preparing undoped GO vertical p–n junctions with advantages such as simplicity, convenience, and large–scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors. |
format | Online Article Text |
id | pubmed-8618643 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-86186432021-11-27 Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect Fan, Yan Wang, Tao Qiu, Yinwei Yang, Yinli Pan, Qiubo Zheng, Jun Zeng, Songwei Liu, Wei Lou, Gang Chen, Liang Molecules Article Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I–V curve of the pGO vertical p–n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p–n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p–n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n–type semiconductor; theoretical calculations and research show that GO is generally a p–type semiconductor with a bandgap, thereby forming a p–n junction. Our work provides a method for preparing undoped GO vertical p–n junctions with advantages such as simplicity, convenience, and large–scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors. MDPI 2021-11-13 /pmc/articles/PMC8618643/ /pubmed/34833941 http://dx.doi.org/10.3390/molecules26226849 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Fan, Yan Wang, Tao Qiu, Yinwei Yang, Yinli Pan, Qiubo Zheng, Jun Zeng, Songwei Liu, Wei Lou, Gang Chen, Liang Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect |
title | Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect |
title_full | Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect |
title_fullStr | Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect |
title_full_unstemmed | Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect |
title_short | Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect |
title_sort | pure graphene oxide vertical p–n junction with remarkable rectification effect |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8618643/ https://www.ncbi.nlm.nih.gov/pubmed/34833941 http://dx.doi.org/10.3390/molecules26226849 |
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