Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory

In contrast to conventional 2-dimensional (2D) NAND flash memory, in 3D NAND flash memory, cell-to-cell interference stemming from parasitic capacitance between the word-lines (WLs) is difficult to control because the number of WLs, achieved for better packing density, have been dramatically increas...

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Detalles Bibliográficos
Autores principales: Jung, Woo-Jin, Park, Jun-Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8619526/
https://www.ncbi.nlm.nih.gov/pubmed/34832709
http://dx.doi.org/10.3390/mi12111297

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8619526/
https://www.ncbi.nlm.nih.gov/pubmed/34832709
http://dx.doi.org/10.3390/mi12111297

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