An Organic/Inorganic Nanomaterial and Nanocrystal Quantum Dots-Based Multi-Level Resistive Memory Device

A cadmium selenide/zinc sulfide (CdSe/ZnS) quantum dot (QD)-based multi-level memory device with the structure [ITO/PEDOT:PSS/QDs/ZnO/Al:Al(2)O(3)/QDs/Al] was fabricated via a spin-coating method used to deposit thin films. Two layers of QD thin films present in the device act as charge storage laye...

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Detalles Bibliográficos
Autores principales: Kim, Sae-Wan, Kwon, JinBeom, Lee, Jae-Sung, Kang, Byoung-Ho, Lee, Sang-Won, Jung, Dong Geon, Lee, Jun-Yeop, Han, Maeum, Kim, Ok-Geun, Saianand, Gopalan, Jung, Daewoong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8620175/
https://www.ncbi.nlm.nih.gov/pubmed/34835768
http://dx.doi.org/10.3390/nano11113004

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8620175/
https://www.ncbi.nlm.nih.gov/pubmed/34835768
http://dx.doi.org/10.3390/nano11113004

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