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Graphene/AlGaN/GaN RF Switch

RF switches, which use a combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system, were proposed and studied in the frequency band from 10 MHz to 114.5 GHz. The switches were integrated into the coplanar waveguide, which allows them to be used in any syste...

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Autores principales: Yashchyshyn, Yevhen, Bajurko, Paweł, Sobolewski, Jakub, Sai, Pavlo, Przewłoka, Aleksandra, Krajewska, Aleksandra, Prystawko, Paweł, Dub, Maksym, Knap, Wojciech, Rumyantsev, Sergey, Cywiński, Grzegorz
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8622333/
https://www.ncbi.nlm.nih.gov/pubmed/34832754
http://dx.doi.org/10.3390/mi12111343
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author Yashchyshyn, Yevhen
Bajurko, Paweł
Sobolewski, Jakub
Sai, Pavlo
Przewłoka, Aleksandra
Krajewska, Aleksandra
Prystawko, Paweł
Dub, Maksym
Knap, Wojciech
Rumyantsev, Sergey
Cywiński, Grzegorz
author_facet Yashchyshyn, Yevhen
Bajurko, Paweł
Sobolewski, Jakub
Sai, Pavlo
Przewłoka, Aleksandra
Krajewska, Aleksandra
Prystawko, Paweł
Dub, Maksym
Knap, Wojciech
Rumyantsev, Sergey
Cywiński, Grzegorz
author_sort Yashchyshyn, Yevhen
collection PubMed
description RF switches, which use a combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system, were proposed and studied in the frequency band from 10 MHz to 114.5 GHz. The switches were integrated into the coplanar waveguide, which allows them to be used in any system without the use of, e.g., bonding, flip-chip and other technologies and avoiding the matching problems. The on-state insertion losses for the designed switches were measured to range from 7.4 to 19.4 dB, depending on the frequency and switch design. Although, at frequencies above 70 GHz, the switches were less effective, the switching effect was still evident with an approximately 4 dB on–off ratio. The best switches exhibited rise and fall switching times of ~25 ns and ~17 ns, respectively. The use of such a switch can provide up to 20 MHz of bandwidth in time-modulated systems, which is an outstanding result for such systems. The proposed equivalent circuit describes well the switching characteristics and can be used to design switches with required parameters.
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spelling pubmed-86223332021-11-27 Graphene/AlGaN/GaN RF Switch Yashchyshyn, Yevhen Bajurko, Paweł Sobolewski, Jakub Sai, Pavlo Przewłoka, Aleksandra Krajewska, Aleksandra Prystawko, Paweł Dub, Maksym Knap, Wojciech Rumyantsev, Sergey Cywiński, Grzegorz Micromachines (Basel) Article RF switches, which use a combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system, were proposed and studied in the frequency band from 10 MHz to 114.5 GHz. The switches were integrated into the coplanar waveguide, which allows them to be used in any system without the use of, e.g., bonding, flip-chip and other technologies and avoiding the matching problems. The on-state insertion losses for the designed switches were measured to range from 7.4 to 19.4 dB, depending on the frequency and switch design. Although, at frequencies above 70 GHz, the switches were less effective, the switching effect was still evident with an approximately 4 dB on–off ratio. The best switches exhibited rise and fall switching times of ~25 ns and ~17 ns, respectively. The use of such a switch can provide up to 20 MHz of bandwidth in time-modulated systems, which is an outstanding result for such systems. The proposed equivalent circuit describes well the switching characteristics and can be used to design switches with required parameters. MDPI 2021-10-31 /pmc/articles/PMC8622333/ /pubmed/34832754 http://dx.doi.org/10.3390/mi12111343 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Yashchyshyn, Yevhen
Bajurko, Paweł
Sobolewski, Jakub
Sai, Pavlo
Przewłoka, Aleksandra
Krajewska, Aleksandra
Prystawko, Paweł
Dub, Maksym
Knap, Wojciech
Rumyantsev, Sergey
Cywiński, Grzegorz
Graphene/AlGaN/GaN RF Switch
title Graphene/AlGaN/GaN RF Switch
title_full Graphene/AlGaN/GaN RF Switch
title_fullStr Graphene/AlGaN/GaN RF Switch
title_full_unstemmed Graphene/AlGaN/GaN RF Switch
title_short Graphene/AlGaN/GaN RF Switch
title_sort graphene/algan/gan rf switch
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8622333/
https://www.ncbi.nlm.nih.gov/pubmed/34832754
http://dx.doi.org/10.3390/mi12111343
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