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Graphene/AlGaN/GaN RF Switch
RF switches, which use a combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system, were proposed and studied in the frequency band from 10 MHz to 114.5 GHz. The switches were integrated into the coplanar waveguide, which allows them to be used in any syste...
Autores principales: | , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8622333/ https://www.ncbi.nlm.nih.gov/pubmed/34832754 http://dx.doi.org/10.3390/mi12111343 |
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author | Yashchyshyn, Yevhen Bajurko, Paweł Sobolewski, Jakub Sai, Pavlo Przewłoka, Aleksandra Krajewska, Aleksandra Prystawko, Paweł Dub, Maksym Knap, Wojciech Rumyantsev, Sergey Cywiński, Grzegorz |
author_facet | Yashchyshyn, Yevhen Bajurko, Paweł Sobolewski, Jakub Sai, Pavlo Przewłoka, Aleksandra Krajewska, Aleksandra Prystawko, Paweł Dub, Maksym Knap, Wojciech Rumyantsev, Sergey Cywiński, Grzegorz |
author_sort | Yashchyshyn, Yevhen |
collection | PubMed |
description | RF switches, which use a combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system, were proposed and studied in the frequency band from 10 MHz to 114.5 GHz. The switches were integrated into the coplanar waveguide, which allows them to be used in any system without the use of, e.g., bonding, flip-chip and other technologies and avoiding the matching problems. The on-state insertion losses for the designed switches were measured to range from 7.4 to 19.4 dB, depending on the frequency and switch design. Although, at frequencies above 70 GHz, the switches were less effective, the switching effect was still evident with an approximately 4 dB on–off ratio. The best switches exhibited rise and fall switching times of ~25 ns and ~17 ns, respectively. The use of such a switch can provide up to 20 MHz of bandwidth in time-modulated systems, which is an outstanding result for such systems. The proposed equivalent circuit describes well the switching characteristics and can be used to design switches with required parameters. |
format | Online Article Text |
id | pubmed-8622333 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-86223332021-11-27 Graphene/AlGaN/GaN RF Switch Yashchyshyn, Yevhen Bajurko, Paweł Sobolewski, Jakub Sai, Pavlo Przewłoka, Aleksandra Krajewska, Aleksandra Prystawko, Paweł Dub, Maksym Knap, Wojciech Rumyantsev, Sergey Cywiński, Grzegorz Micromachines (Basel) Article RF switches, which use a combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system, were proposed and studied in the frequency band from 10 MHz to 114.5 GHz. The switches were integrated into the coplanar waveguide, which allows them to be used in any system without the use of, e.g., bonding, flip-chip and other technologies and avoiding the matching problems. The on-state insertion losses for the designed switches were measured to range from 7.4 to 19.4 dB, depending on the frequency and switch design. Although, at frequencies above 70 GHz, the switches were less effective, the switching effect was still evident with an approximately 4 dB on–off ratio. The best switches exhibited rise and fall switching times of ~25 ns and ~17 ns, respectively. The use of such a switch can provide up to 20 MHz of bandwidth in time-modulated systems, which is an outstanding result for such systems. The proposed equivalent circuit describes well the switching characteristics and can be used to design switches with required parameters. MDPI 2021-10-31 /pmc/articles/PMC8622333/ /pubmed/34832754 http://dx.doi.org/10.3390/mi12111343 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Yashchyshyn, Yevhen Bajurko, Paweł Sobolewski, Jakub Sai, Pavlo Przewłoka, Aleksandra Krajewska, Aleksandra Prystawko, Paweł Dub, Maksym Knap, Wojciech Rumyantsev, Sergey Cywiński, Grzegorz Graphene/AlGaN/GaN RF Switch |
title | Graphene/AlGaN/GaN RF Switch |
title_full | Graphene/AlGaN/GaN RF Switch |
title_fullStr | Graphene/AlGaN/GaN RF Switch |
title_full_unstemmed | Graphene/AlGaN/GaN RF Switch |
title_short | Graphene/AlGaN/GaN RF Switch |
title_sort | graphene/algan/gan rf switch |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8622333/ https://www.ncbi.nlm.nih.gov/pubmed/34832754 http://dx.doi.org/10.3390/mi12111343 |
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