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Stable Field Emission from Vertically Oriented SiC Nanoarrays
Silicon carbide (SiC) nanostructure is a type of promising field emitter due to high breakdown field strength, high thermal conductivity, low electron affinity, and high electron mobility. However, the fabrication of the SiC nanotips array is difficult due to its chemical inertness. Here we report a...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8622368/ https://www.ncbi.nlm.nih.gov/pubmed/34835790 http://dx.doi.org/10.3390/nano11113025 |
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author | Xiao, Jianfeng Zhao, Jiuzhou Liu, Guanjiang Cole, Mattew Thomas Zhou, Shenghan Chen, Ke Liu, Xinchuan Li, Zhenjun Li, Chi Dai, Qing |
author_facet | Xiao, Jianfeng Zhao, Jiuzhou Liu, Guanjiang Cole, Mattew Thomas Zhou, Shenghan Chen, Ke Liu, Xinchuan Li, Zhenjun Li, Chi Dai, Qing |
author_sort | Xiao, Jianfeng |
collection | PubMed |
description | Silicon carbide (SiC) nanostructure is a type of promising field emitter due to high breakdown field strength, high thermal conductivity, low electron affinity, and high electron mobility. However, the fabrication of the SiC nanotips array is difficult due to its chemical inertness. Here we report a simple, industry-familiar reactive ion etching to fabricate well-aligned, vertically orientated SiC nanoarrays on 4H-SiC wafers. The as-synthesized nanoarrays had tapered base angles >60°, and were vertically oriented with a high packing density >10(7) mm(−2) and high-aspect ratios of approximately 35. As a result of its high geometry uniformity—5% length variation and 10% diameter variation, the field emitter array showed typical turn-on fields of 4.3 V μm(−1) and a high field-enhancement factor of ~1260. The 8 h current emission stability displayed a mean current fluctuation of 1.9 ± 1%, revealing excellent current emission stability. The as-synthesized emitters demonstrate competitive emission performance that highlights their potential in a variety of vacuum electronics applications. This study provides a new route to realizing scalable field electron emitter production. |
format | Online Article Text |
id | pubmed-8622368 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-86223682021-11-27 Stable Field Emission from Vertically Oriented SiC Nanoarrays Xiao, Jianfeng Zhao, Jiuzhou Liu, Guanjiang Cole, Mattew Thomas Zhou, Shenghan Chen, Ke Liu, Xinchuan Li, Zhenjun Li, Chi Dai, Qing Nanomaterials (Basel) Article Silicon carbide (SiC) nanostructure is a type of promising field emitter due to high breakdown field strength, high thermal conductivity, low electron affinity, and high electron mobility. However, the fabrication of the SiC nanotips array is difficult due to its chemical inertness. Here we report a simple, industry-familiar reactive ion etching to fabricate well-aligned, vertically orientated SiC nanoarrays on 4H-SiC wafers. The as-synthesized nanoarrays had tapered base angles >60°, and were vertically oriented with a high packing density >10(7) mm(−2) and high-aspect ratios of approximately 35. As a result of its high geometry uniformity—5% length variation and 10% diameter variation, the field emitter array showed typical turn-on fields of 4.3 V μm(−1) and a high field-enhancement factor of ~1260. The 8 h current emission stability displayed a mean current fluctuation of 1.9 ± 1%, revealing excellent current emission stability. The as-synthesized emitters demonstrate competitive emission performance that highlights their potential in a variety of vacuum electronics applications. This study provides a new route to realizing scalable field electron emitter production. MDPI 2021-11-11 /pmc/articles/PMC8622368/ /pubmed/34835790 http://dx.doi.org/10.3390/nano11113025 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Xiao, Jianfeng Zhao, Jiuzhou Liu, Guanjiang Cole, Mattew Thomas Zhou, Shenghan Chen, Ke Liu, Xinchuan Li, Zhenjun Li, Chi Dai, Qing Stable Field Emission from Vertically Oriented SiC Nanoarrays |
title | Stable Field Emission from Vertically Oriented SiC Nanoarrays |
title_full | Stable Field Emission from Vertically Oriented SiC Nanoarrays |
title_fullStr | Stable Field Emission from Vertically Oriented SiC Nanoarrays |
title_full_unstemmed | Stable Field Emission from Vertically Oriented SiC Nanoarrays |
title_short | Stable Field Emission from Vertically Oriented SiC Nanoarrays |
title_sort | stable field emission from vertically oriented sic nanoarrays |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8622368/ https://www.ncbi.nlm.nih.gov/pubmed/34835790 http://dx.doi.org/10.3390/nano11113025 |
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