Stable Field Emission from Vertically Oriented SiC Nanoarrays

Silicon carbide (SiC) nanostructure is a type of promising field emitter due to high breakdown field strength, high thermal conductivity, low electron affinity, and high electron mobility. However, the fabrication of the SiC nanotips array is difficult due to its chemical inertness. Here we report a...

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Detalles Bibliográficos
Autores principales: Xiao, Jianfeng, Zhao, Jiuzhou, Liu, Guanjiang, Cole, Mattew Thomas, Zhou, Shenghan, Chen, Ke, Liu, Xinchuan, Li, Zhenjun, Li, Chi, Dai, Qing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8622368/
https://www.ncbi.nlm.nih.gov/pubmed/34835790
http://dx.doi.org/10.3390/nano11113025

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8622368/
https://www.ncbi.nlm.nih.gov/pubmed/34835790
http://dx.doi.org/10.3390/nano11113025

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