Cargando…
Stable Field Emission from Vertically Oriented SiC Nanoarrays
Silicon carbide (SiC) nanostructure is a type of promising field emitter due to high breakdown field strength, high thermal conductivity, low electron affinity, and high electron mobility. However, the fabrication of the SiC nanotips array is difficult due to its chemical inertness. Here we report a...
Autores principales: | Xiao, Jianfeng, Zhao, Jiuzhou, Liu, Guanjiang, Cole, Mattew Thomas, Zhou, Shenghan, Chen, Ke, Liu, Xinchuan, Li, Zhenjun, Li, Chi, Dai, Qing |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8622368/ https://www.ncbi.nlm.nih.gov/pubmed/34835790 http://dx.doi.org/10.3390/nano11113025 |
Ejemplares similares
-
Preparation and Characterization of Pure SiC Ceramics by HTPVT Induced by Seeding with SiC Nanoarrays
por: Deng, Yu-Chen, et al.
Publicado: (2021) -
Nanocone-Shaped Carbon Nanotubes Field-Emitter Array Fabricated by Laser Ablation
por: Zhao, Jiuzhou, et al.
Publicado: (2021) -
Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters
por: Chen, Shanliang, et al.
Publicado: (2015) -
Vertical GaN and SiC power devices
por: Mochizuki, Kazuhiro
Publicado: (2018) -
Towards stable silicon nanoarray hybrid solar cells
por: He, W. W., et al.
Publicado: (2014)