Inkjet Printing Infiltration of the Doped Ceria Interlayer in Commercial Anode-Supported SOFCs

Single-step inkjet printing infiltration with doped ceria Ce(0.9)Ye(0.1)O(1.95) (YDC) and cobalt oxide (Co(x)O(y)) precursor inks was performed in order to modify the properties of the doped ceria interlayer in commercial (50 × 50 × 0.5 mm(3) size) anode-supported SOFCs. The penetration of the inks throughout the La(0.8)Sr(0.2)Co(0.5)Fe(0.5)O(3−δ) porous cathode to the Gd(0.1)Ce(0.9)O(2) (GDC) interlayer was achieved by optimisation of the inks’ rheology jetting parameters. The low-temperature calcination (750 °C) resulted in densification of the Gd-doped ceria porous interlayer as well as decoration of the cathode scaffold with nanoparticles (~20–50 nm in size). The I–V testing in pure hydrogen showed a maximum power density gain of ~20% at 700 °C and ~97% at 800 °C for the infiltrated cells. The latter effect was largely assigned to the improvement in the interfacial Ohmic resistance due to the densification of the interlayer. The EIS study of the polarisation losses of the reference and infiltrated cells revealed a reduction in the activation polarisations losses at 700 °C due to the nano-decoration of the La(0.8)Sr(0.2)Co(0.5)Fe(0.5)O(3−δ) scaffold surface. Such was not the case at 800 °C, where the drop in Ohmic losses was dominant. This work demonstrated that single-step inkjet printing infiltration, a non-disruptive, low-cost technique, can produce significant and scalable performance enhancements in commercial anode-supported SOFCs.