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The Surface Photogalvanic and Photon Drag Effects in Ag/Pd Metal-Semiconductor Nanocomposite
We performed the investigation of the polarization-sensitive photocurrent generated in silver-palladium metal-semiconductor nanocomposite films under irradiation with nanosecond laser pulses at the wavelength of 2600 nm. It is shown that in both the transverse and the longitudinal configuration, the...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8623762/ https://www.ncbi.nlm.nih.gov/pubmed/34835592 http://dx.doi.org/10.3390/nano11112827 |
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author | Saushin, Aleksandr S. Mikheev, Gennady M. Vanyukov, Viatcheslav V. Svirko, Yuri P. |
author_facet | Saushin, Aleksandr S. Mikheev, Gennady M. Vanyukov, Viatcheslav V. Svirko, Yuri P. |
author_sort | Saushin, Aleksandr S. |
collection | PubMed |
description | We performed the investigation of the polarization-sensitive photocurrent generated in silver-palladium metal-semiconductor nanocomposite films under irradiation with nanosecond laser pulses at the wavelength of 2600 nm. It is shown that in both the transverse and the longitudinal configuration, the surface photogalvanic (SPGE) and photon drag effects (PDE) contribute to the observed photocurrent. However, the temporal profile of the transverse photocurrent pulse is monopolar at any polarization and angle of incidence, while the temporal profile of the longitudinal photocurrent pulse depends on the polarization of the excitation beam. Specifically, the irradiation of the film with the s-polarized excitation beam produces a monopolar photoresponse, while at p-polarized excitation, the photoresponse is bipolar, having a short front and long tail. Obtained experimental results are in agreement with the developed phenomenological theory, which describes transverse and longitudinal photocurrents due to SPGE and PDE in terms of relevant second-order nonlinear susceptibilities and allows us to obtain their dependences on the angle of incidence and polarization of the excitation laser beam. The pronounced dependence of the photocurrent on the angle of incidence and polarization of the excitation beam opens avenues toward the development of polarization- and position-sensitive detectors for industrial and space applications. |
format | Online Article Text |
id | pubmed-8623762 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-86237622021-11-27 The Surface Photogalvanic and Photon Drag Effects in Ag/Pd Metal-Semiconductor Nanocomposite Saushin, Aleksandr S. Mikheev, Gennady M. Vanyukov, Viatcheslav V. Svirko, Yuri P. Nanomaterials (Basel) Article We performed the investigation of the polarization-sensitive photocurrent generated in silver-palladium metal-semiconductor nanocomposite films under irradiation with nanosecond laser pulses at the wavelength of 2600 nm. It is shown that in both the transverse and the longitudinal configuration, the surface photogalvanic (SPGE) and photon drag effects (PDE) contribute to the observed photocurrent. However, the temporal profile of the transverse photocurrent pulse is monopolar at any polarization and angle of incidence, while the temporal profile of the longitudinal photocurrent pulse depends on the polarization of the excitation beam. Specifically, the irradiation of the film with the s-polarized excitation beam produces a monopolar photoresponse, while at p-polarized excitation, the photoresponse is bipolar, having a short front and long tail. Obtained experimental results are in agreement with the developed phenomenological theory, which describes transverse and longitudinal photocurrents due to SPGE and PDE in terms of relevant second-order nonlinear susceptibilities and allows us to obtain their dependences on the angle of incidence and polarization of the excitation laser beam. The pronounced dependence of the photocurrent on the angle of incidence and polarization of the excitation beam opens avenues toward the development of polarization- and position-sensitive detectors for industrial and space applications. MDPI 2021-10-25 /pmc/articles/PMC8623762/ /pubmed/34835592 http://dx.doi.org/10.3390/nano11112827 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Saushin, Aleksandr S. Mikheev, Gennady M. Vanyukov, Viatcheslav V. Svirko, Yuri P. The Surface Photogalvanic and Photon Drag Effects in Ag/Pd Metal-Semiconductor Nanocomposite |
title | The Surface Photogalvanic and Photon Drag Effects in Ag/Pd Metal-Semiconductor Nanocomposite |
title_full | The Surface Photogalvanic and Photon Drag Effects in Ag/Pd Metal-Semiconductor Nanocomposite |
title_fullStr | The Surface Photogalvanic and Photon Drag Effects in Ag/Pd Metal-Semiconductor Nanocomposite |
title_full_unstemmed | The Surface Photogalvanic and Photon Drag Effects in Ag/Pd Metal-Semiconductor Nanocomposite |
title_short | The Surface Photogalvanic and Photon Drag Effects in Ag/Pd Metal-Semiconductor Nanocomposite |
title_sort | surface photogalvanic and photon drag effects in ag/pd metal-semiconductor nanocomposite |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8623762/ https://www.ncbi.nlm.nih.gov/pubmed/34835592 http://dx.doi.org/10.3390/nano11112827 |
work_keys_str_mv | AT saushinaleksandrs thesurfacephotogalvanicandphotondrageffectsinagpdmetalsemiconductornanocomposite AT mikheevgennadym thesurfacephotogalvanicandphotondrageffectsinagpdmetalsemiconductornanocomposite AT vanyukovviatcheslavv thesurfacephotogalvanicandphotondrageffectsinagpdmetalsemiconductornanocomposite AT svirkoyurip thesurfacephotogalvanicandphotondrageffectsinagpdmetalsemiconductornanocomposite AT saushinaleksandrs surfacephotogalvanicandphotondrageffectsinagpdmetalsemiconductornanocomposite AT mikheevgennadym surfacephotogalvanicandphotondrageffectsinagpdmetalsemiconductornanocomposite AT vanyukovviatcheslavv surfacephotogalvanicandphotondrageffectsinagpdmetalsemiconductornanocomposite AT svirkoyurip surfacephotogalvanicandphotondrageffectsinagpdmetalsemiconductornanocomposite |