Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory

We have investigated highly flexible memristive devices using reduced graphene oxide (RGO) nanosheet nanocomposites with an embedded GQD Layer. Resistive switching behavior of poly (4-vinylphenol):graphene quantum dot (PVP:GQD) composite and HfOx hybrid bilayer was explored for developing flexible r...

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Detalles Bibliográficos
Autores principales: Kim, Jin Mo, Hwang, Sung Won
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8624941/
https://www.ncbi.nlm.nih.gov/pubmed/34833850
http://dx.doi.org/10.3390/molecules26226758

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8624941/
https://www.ncbi.nlm.nih.gov/pubmed/34833850
http://dx.doi.org/10.3390/molecules26226758

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