Photovoltaic Characteristics of GaSe/MoSe(2) Heterojunction Devices

The two-dimensional materials have the thickness of an atomic layer level and are expected as alternative materials for future electronics and optoelectronics due to their specific properties. Especially recently, transition metal monochalcogenides and dichalcogenides have attracted attention. Since...

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Detalles Bibliográficos
Autores principales: Ishikawa, Ryousuke, Ko, Pil Ju, Anzo, Ryoutaro, Woo, Chang Lim, Oh, Gilgu, Tsuboi, Nozomu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2021
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8630300/
https://www.ncbi.nlm.nih.gov/pubmed/34842967
http://dx.doi.org/10.1186/s11671-021-03630-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8630300/
https://www.ncbi.nlm.nih.gov/pubmed/34842967
http://dx.doi.org/10.1186/s11671-021-03630-y

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