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Photovoltaic Characteristics of GaSe/MoSe(2) Heterojunction Devices
The two-dimensional materials have the thickness of an atomic layer level and are expected as alternative materials for future electronics and optoelectronics due to their specific properties. Especially recently, transition metal monochalcogenides and dichalcogenides have attracted attention. Since...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8630300/ https://www.ncbi.nlm.nih.gov/pubmed/34842967 http://dx.doi.org/10.1186/s11671-021-03630-y |