Deep-ultraviolet electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures

Hexagonal boron nitride (hBN) is a van der Waals semiconductor with a wide bandgap of ~ 5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high energy electrons or photons efficiently emit luminescence at deep-ultraviolet (DUV) frequencies via strong electron-ph...

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Detalles Bibliográficos
Autores principales: Song, Su-Beom, Yoon, Sangho, Kim, So Young, Yang, Sera, Seo, Seung-Young, Cha, Soonyoung, Jeong, Hyeon-Woo, Watanabe, Kenji, Taniguchi, Takashi, Lee, Gil-Ho, Kim, Jun Sung, Jo, Moon-Ho, Kim, Jonghwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8654827/
https://www.ncbi.nlm.nih.gov/pubmed/34880247
http://dx.doi.org/10.1038/s41467-021-27524-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8654827/
https://www.ncbi.nlm.nih.gov/pubmed/34880247
http://dx.doi.org/10.1038/s41467-021-27524-w

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